Abstract: Method for the selective deposition of tungsten on a silicon surface. A silicon surface is provided with a masking structure of, for example, SiO.sub.2. The deposition from the vapor phase is implemented in a CVD reactor from a mixture of process gases such that the masking structure remains essentially free of tungsten. The process parameters of temperature, pressure and flow-through rates of the process gases for the selective deposition are determined for a prescribed deposition rate by solving an equation system that contains the conservation laws for the mass, the chemical constituents participating in the deposition reaction, the momentum and the energy taking the boundary conditions of the CVD reactor into consideration, and the effects of thermodiffusion and multi-constituent diffusion.