Patents by Inventor Igor Bello
Igor Bello has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8158011Abstract: A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the cBN film, and (e) etching the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.Type: GrantFiled: October 14, 2008Date of Patent: April 17, 2012Assignee: City University of Hong KongInventors: Wen-Jun Zhang, Igor Bello, Shuit-Tong Lee, You-Sheng Zou, Yat Ming Chong, Qing Ye
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Patent number: 8101526Abstract: A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.Type: GrantFiled: March 12, 2008Date of Patent: January 24, 2012Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Wenjun Zhang, Igor Bello, You-Sheng Zou
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Patent number: 8007910Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion.Type: GrantFiled: July 19, 2007Date of Patent: August 30, 2011Assignee: City University of Hong KongInventors: Wenjun Zhang, Shuit-Tong Lee, Igor Bello, Kar Man Leung, He-qin Li, You-Shen Zou, Yat Ming Chong, Kwok Leung Ma
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Publication number: 20100093171Abstract: A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the the cBN film, and (e) etching the the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.Type: ApplicationFiled: October 14, 2008Publication date: April 15, 2010Applicant: CITY UNIVERSITY OF HONG KONGInventors: Wen-Jun Zhang, Igor Bello, Shuit-Tong Lee, You-Sheng Zou, Yat Ming Chong, Qing Ye
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Patent number: 7645513Abstract: Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation.Type: GrantFiled: August 19, 2005Date of Patent: January 12, 2010Assignee: City University of Hong KongInventors: Igor Bello, Wenjun Zhang, Shuit-Tong Lee
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Publication number: 20090233445Abstract: A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.Type: ApplicationFiled: March 12, 2008Publication date: September 17, 2009Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit-Tong Lee, Wenjun Zhang, Igor Bello, You-Sheng Zou
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Patent number: 7579759Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.Type: GrantFiled: June 11, 2007Date of Patent: August 25, 2009Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Wen-Jun Zhang, You-Sheng Zou, Igor Bello, Kwok Leung Ma, Kar Man Leung, Yat Ming Chong
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Publication number: 20090022969Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion.Type: ApplicationFiled: July 19, 2007Publication date: January 22, 2009Applicant: City University of Hong KongInventors: Wenjun Zhang, Shuit-Tong Lee, Igor Bello, Kar Man Leung, He-qin Li, You-Shen Zou, Yat Ming Chong, Kwok Leung Ma
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Publication number: 20080303378Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.Type: ApplicationFiled: June 11, 2007Publication date: December 11, 2008Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit-Tong LEE, Wen-Jun ZHANG, You-Sheng ZOU, Igor BELLO, Kwok Leung MA, Kar Man LEUNG, Yat Ming CHONG
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Publication number: 20060147282Abstract: Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation.Type: ApplicationFiled: August 19, 2005Publication date: July 6, 2006Inventors: Igor Bello, Wenjun Zhang, Shuit-Tong Lee
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Patent number: 6902716Abstract: The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of synthetic diamond films with reactive etching processes. Upon the diamond orientation prepared and reactive etching environment with considerable directivity of ions, single crystal diamond tips with different apical angles can be fabricated. Very sharp diamond tips with an apical angle of no more than about 28° and a tip radius smaller than 50 nm are fabricated on pyramidal-shaped [001]-textured diamond films by subsequent reactive etching., The technology is based on selective etching of sp2- and sp3- hybridized carbons by the activated constituents of an etching environment, in particular based on atomic hydrogen, in a way similar to ion bombardment, which contributes to overall etching and local conversion of diamond to graphitic phase promoting further etching with chemically activated species.Type: GrantFiled: October 29, 2002Date of Patent: June 7, 2005Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Igor Bello, Wenjun Zhang, Chit Yiu Chan
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Publication number: 20040161609Abstract: Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation.Type: ApplicationFiled: February 14, 2003Publication date: August 19, 2004Inventors: Igor Bello, Wen Jun Zhang, Shuit-Tong Lee
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Patent number: 6761803Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.Type: GrantFiled: December 17, 2001Date of Patent: July 13, 2004Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Igor Bello, Chun-Sing Lee, Quan Li, Naigui Shang
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Publication number: 20040079280Abstract: The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of synthetic diamond films with reactive etching processes. Upon the diamond orientation prepared and reactive etching environment with considerable directivity of ions, single crystal diamond tips with different apical angles can be fabricated. Very sharp diamond tips with an apical angle of no more than about 28° and a tip radius smaller than 50 nm are fabricated on pyramidal-shaped [001]-textured diamond films by subsequent reactive etching., The technology is based on selective etching of sp2- and sp3- hybridized carbons by the activated constituents of an etching environment, in particular based on atomic hydrogen, in a way similar to ion bombardment, which contributes to overall etching and local conversion of diamond to graphitic phase promoting further etching with chemically activated species.Type: ApplicationFiled: October 29, 2002Publication date: April 29, 2004Inventors: Shuit-Tong Lee, Igor Bello, Wenjun Zhang, Chit Yiu Chan
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Publication number: 20030111336Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.Type: ApplicationFiled: December 17, 2001Publication date: June 19, 2003Inventors: Shuit-Tong Lee, Igor Bello, Chun-Sing Lee, Quan Li, Naigui Shang
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Patent number: 6313015Abstract: Silicon nanowires and silicon nanoparticle chains are formed by the activation of silicon monoxide in the vapor phase. The silicon monoxide source may be solid or gaseous, and the activation may be by thermal excitation, laser ablation, plasma or magnetron sputtering. The present invention produces large amounts of silicon nanowires without requiring the use of any catalysts that may cause contamination.Type: GrantFiled: June 8, 1999Date of Patent: November 6, 2001Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Ning Wang, Chun-Sing Lee, Igor Bello
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Patent number: 6221154Abstract: A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.Type: GrantFiled: February 18, 1999Date of Patent: April 24, 2001Assignee: City University of Hong KongInventors: Shuit-tong Lee, Chun-Sing Lee, Ning Wang, Igor Bello, Carol Hau Ling Lai, Xing Tai Zhou, Frederick Chi Kan Au