Abstract: A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.

Abstract: A multi-layer laser diode mount is configured with a submount made from thermo- and electro-conductive material. One of the opposite surfaces of the submount supports a laser diode. The other surface of the submount faces and is spaced from a heatsink. The submount and heatsink are configured with respective thermal expansion coefficients (“TEC”) which are different from one another. The opposite surfaces of the submount are electroplated with respective metal layers one of which is bonded to a soft solder layer. In one aspect of the disclosure, the mount is further configured with a spacer having the same TEC as that of the submount and bonded to the soft solder layer. A layer of hard solder bonds the spacer and heatsink to one another. In a further aspect of the disclosure, the electroplated metal layer in contact with the other surface of the submount is hundred- or more micron thick. The soft solder is directly bonded to the heatsink.

Abstract: A multi-layer laser diode mount is configured with a submount made from thermo- and electro-conductive material. One of the opposite surfaces of the submount supports a laser diode. The other surface of the submount faces and is spaced from a heatsink. The submount and heatsink are configured with respective thermal expansion coefficients (“TEC”) which are different from one another. The opposite surfaces of the submount are electroplated with respective metal layers one of which is bonded to a soft solder layer. In one aspect of the disclosure, the mount is further configured with a spacer having the same TEC as that of the submount and bonded to the soft solder layer. A layer of hard solder bonds the spacer and heatsink to one another. In a further aspect of the disclosure, the electroplated metal layer in contact with the other surface of the submount is hundred- or more micron thick. The soft solder is directly bonded to the heatsink.

Abstract: A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.

Abstract: A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.

Abstract: An improved high power spatial filter, system and method. In the system, an optical fiber is disposed inside a ferrule channel structure, and the channel structure is aligned with a focusing lens system. The end of the fiber is at a distance D from the channel opening that faces the focusing lens system, and D is determined by the system's numeric aperture factor and the cladding thickness of the optical fiber.

Abstract: A module is configured with a housing enclosing a diode laser. Fast and slow axes collimators are located behind the rear facet of the laser, which along with a front facet, defines an intra-cavity cavity of the laser. The facets are partially transmissive to light and therefore emit laser light. A wavelength selective optical element is aligned with the collimators and configured to reflect light emitted through the back facet and processed by collimators back into the intra-cavity. As a result, the laser beam is emitted through the front facet at a wavelength locked on the desired wavelength of the optical element. A delivery fiber is mechanically coupled to the front facet of diode laser and configured to receive and guide the emitted laser beam along the path of light.

Abstract: A twin fiber laser arrangement is configured with active and passive fibers supporting respective signal and pump lights and a reflective coating surrounding the fibers along a section of the arrangement. The passive fiber has regions covered by respective protective layer and coating-free regions alternating with the layer covered regions, wherein the reflective coating is configured to overlap the protective layer which shields the end of the reflective coating from high power pump light.

Abstract: An improved high power special filter, system and method. In the system, an optical fiber is disposed inside a ferule channel structure, and the channel structure is aligned with a focusing lens system. The end of the fiber is at a distance D from the channel opening that faces the focusing lens system, and D is determined by the system's numeric aperture factor and the cladding thickness of the optical fiber.

Abstract: A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.

Abstract: A semiconductor unit includes a submount and a chip coupled to the submount. The submount is configured with a base and a plurality of layers between the base and the chip. One of the layers, a heat-spreading electro-conducting sliver (“Ag”) layer, is deposited atop the base. The thickness of the Ag layer is selected so that a cumulative coefficient of thermal expansion of the submount substantially matches that one of the chip. Coupled to the active zone of the chip is a stress-dumping layer made from elastic malleable materials.

Abstract: A twin fiber laser arrangement is configured with active and passive fibers supporting respective signal and pump lights and a reflective coating surrounding the fibers along a section of the arrangement. The passive fiber has regions covered by respective protective layer and coating-free regions alternating with the layer covered regions, wherein the reflective coating is configured to overlap the protective layer which shields the end of the reflective coating from high power pump light.

Abstract: A powerful high-brightness laser pump modules is configured with a plurality of spaced laser diodes each generating a light beam at a pump wavelength, and respective groups of optical components guiding the light beams along parallel light paths. The groups of the optical components each include a lens assembly and a bending mirror configured to couple the beam light into an output fiber which is common to all groups of the optical component. At least one optical component of each group is provided with a dielectric layer capable of preventing propagation of a backreflected light toward laser diodes at a wavelength different from the pump wavelength.

Abstract: A powerful high-brightness laser pump modules is configured with a plurality of spaced laser diodes each generating a light beam at a pump wavelength, and respective groups of optical components guiding the light beams along parallel light paths. The groups of the optical components each include a lens assembly and a bending mirror configured to couple the beam light into an output fiber which is common to all groups of the optical component. At least one optical component of each group is provided with a dielectric layer capable of preventing propagation of a backreflected light toward laser diodes at a wavelength different from the pump wavelength.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.

Abstract: Field emitter as a source of electrons and method for making are provided. The emitter is formed by growth of a nitride compound of a group III element or alloys of group III elements on a substrate having a lattice mismatch with the thin film. The lattice mismatch causes columnar growth in the film. The micro columns have tips, thus forming an array of crystalline microtips of the low work function nitride material. The nitride compound is doped during growth. Gallium nitride grown on (111) silicon and doped with silicon produces a surface having low threshold electric field for emission and high current per unit area.