Patents by Inventor Igor O. Usov

Igor O. Usov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9315385
    Abstract: A spun fiber of carbon nanotubes is exposed to ion irradiation. The irradiation exposure increases the specific strength of the spun fiber.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: April 19, 2016
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Yuntian T. Zhu, Igor O. Usov, Xiefei Zhang
  • Patent number: 9181098
    Abstract: An array of carbon nanotubes is prepared by exposing a catalyst structure to a carbon nanotube precursor. Embodiment catalyst structures include one or more trenches, channels, or a combination of trenches and channels. A system for preparing the array includes a heated surface for heating the catalyst structure and a cooling portion that cools gas above the catalyst structure. The system heats the catalyst structure so that the interaction between the precursor and the catalyst structure results in the formation of an array of carbon nanotubes on the catalyst structure, and cools the gas near the catalyst structure and also cools any carbon nanotubes that form on the catalyst structure to prevent or at least minimize the formation of amorphous carbon. Arrays thus formed may be used for spinning fibers of carbon nanotubes.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: November 10, 2015
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Ramond F. DePaula, Yuntian T. Zhu, Igor O. Usov
  • Patent number: 7851412
    Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: December 14, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Liliana Stan, Quanxi Jia, Raymond F. DePaula, Igor O. Usov
  • Publication number: 20100284896
    Abstract: A spun fiber of carbon nanotubes is exposed to ion irradiation. The irradiation exposure increases the specific strength of the spun fiber.
    Type: Application
    Filed: December 17, 2007
    Publication date: November 11, 2010
    Inventors: Paul N. Arendt, Yuntian T. Zhu, Igor O. Usov, Xiefei Zhang
  • Patent number: 7737085
    Abstract: Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: June 15, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Stephen R. Foltyn, Liliana Stan, Igor O. Usov, Haiyan Wang
  • Publication number: 20080197327
    Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
    Type: Application
    Filed: February 15, 2007
    Publication date: August 21, 2008
    Inventors: Paul N. Arendt, Liliana Stan, Quanxi Jia, Raymond F. DePaula, Igor O. Usov
  • Publication number: 20080181839
    Abstract: An array of carbon nanotubes is prepared by exposing a catalyst structure to a carbon nanotube precursor. Embodiment catalyst structures include one or more trenches, channels, or a combination of trenches and channels. A system for preparing the array includes a heated surface for heating the catalyst structure and a cooling portion that cools gas above the catalyst structure. The system heats the catalyst structure so that the interaction between the precursor and the catalyst structure results in the formation of an array of carbon nanotubes on the catalyst structure, and cools the gas near the catalyst structure and also cools any carbon nanotubes that form on the catalyst structure to prevent or at least minimize the formation of amorphous carbon. Arrays thus formed may be used for spinning fibers of carbon nanotubes.
    Type: Application
    Filed: December 13, 2007
    Publication date: July 31, 2008
    Inventors: Paul N. Arendt, Ramond F. DePaula, Yuntian T. Zhu, Igor O. Usov