Patents by Inventor Igor Stolichnov

Igor Stolichnov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric capacitor and method of manufacturing the same
    Patent number: 7473949
    Abstract: After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: January 6, 2009
    Assignee: Fujitsu Limited
    Inventors: Jeffrey Scott Cross, Mineharu Tsukada, John David Baniecki, Kenji Nomura, Igor Stolichnov
  • Ferroelectric capacitor and method of manufacturing the same
    Publication number: 20050156216
    Abstract: After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.
    Type: Application
    Filed: March 17, 2005
    Publication date: July 21, 2005
    Applicant: FUJITSU LIMITED
    Inventors: Jeffrey Cross, Mineharu Tsukada, John Baniecki, Kenji Nomura, Igor Stolichnov