Abstract: A method for optical metrology of a sample, the method may include illuminating areas of the sample by sets of pulses of different wavelengths, during a movement of a variable speed of the sample; collecting light reflected from the sample, as a result of the illuminating, to provide sets of frames, each set of frames comprises partially overlapping frames associated with the different wavelengths; and processing the frames to provide optical metrology results indicative of one or more evaluated parameters of elements of the areas of the sample; wherein the processing is based on a mapping between the sets of frames and reference measurements obtained by an other optical metrology process that exhibits a higher spectral resolution than a spectral resolution obtained by the illuminating and the collecting.

Abstract: A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure having a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.

Abstract: A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A test site and method are herein disclosed for predicting E-test structure (in-die structure) and/or device performance. The test site comprises an E-test structure and OCD-compatible multiple structures in the vicinity of the E-test structure to allow optical scatterometry (OCD) measurements. The OCD-compatible multiple structures are modified by at least one modification technique selected from (a) multiplication type modification technique, (b) dummification type modification technique, (c) special Target design type modification technique, and (d) at least one combination of (a), (b) and (c) for having a performance equivalent to the performance of the E-test structure.

Abstract: A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure having a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.

Abstract: A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.

Abstract: A system and method are presented for controlling a process applied to a structure comprising at least one of material removal and material deposition processes. The system comprises: a heating radiation source configured and operable to generate a temperature field profile across a processing area of the structure; and a control unit configured and operable to control operation of said heating radiation source in accordance with a predetermined pattern map within the processing area, so as to create a corresponding pattern selective profile of said temperature field across said processing area providing desired pattern selective distribution of at least one parameter characterizing the process applied to the processing area of the structure.

Abstract: A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure comprising a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.

Abstract: A test site and method are herein disclosed for predicting E-test structure (in-die structure) and/or device performance. The test site comprises an E-test structure and OCD-compatible multiple structures in the vicinity of the E-test structure to allow optical scatterometry (OCD) measurements. The OCD-compatible multiple structures are modified by at least one modification technique selected from (a) multiplication type modification technique, (b) dummification type modification technique, (c) special Target design type modification technique, and (d) at least one combination of (a), (b) and (c) for having a performance equivalent to the performance of the E-test structure.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).

Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region.

Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure.

Abstract: A system and method are presented for controlling a process applied to a structure comprising at least one of material removal and material deposition processes. The system comprises: a heating radiation source configured and operable to generate a temperature field profile across a processing area of the structure; and a control unit configured and operable to control operation of said heating radiation source in accordance with a predetermined pattern map within the processing area, so as to create a corresponding pattern selective profile of said temperature field across said processing area providing desired pattern selective distribution of at least one parameter characterizing the process applied to the processing area of the structure.

Abstract: An article is presented configured for controlling a multiple patterning process, such as a spacer self-aligned multiple patterning, to produce a target pattern. The article comprises a test site carrying a test structure comprising at least one pair of gratings, wherein first and second gratings of the pair are in the form of first and second patterns of alternating features and spaces and differ from the target pattern by respectively different first and second values which are selected to provide together a total difference such that a differential optical response from the test structure is indicative of a pitch walking effect.

Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure.

Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure.

Abstract: A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).