Patents by Inventor Igor Usov

Igor Usov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9837564
    Abstract: Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: December 5, 2017
    Assignee: Los Alamos National Security, LLC
    Inventors: Milan Sykora, Igor Usov
  • Publication number: 20170018673
    Abstract: Solar cells including thin film depleted uranium oxide (DUO) may be produced using an ion beam assisted deposition (IBAD) process, for example. p-type DUO film and n-type DUO film may form a p/n junction. The photovoltaic (PV) structure may be completed by evaporating a metal electrode on top of one of the DUO films.
    Type: Application
    Filed: June 21, 2016
    Publication date: January 19, 2017
    Applicant: Los Alamos National Security, LLC
    Inventors: Igor Usov, Milan Sykora
  • Patent number: 7589004
    Abstract: A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: September 15, 2009
    Assignee: Los Alamos National Security, LLC
    Inventors: Igor Usov, Paul N. Arendt
  • Publication number: 20070026136
    Abstract: A process is disclosed of preparing a template layer of a biaxially oriented material by ion beam assisted deposition upon a length of a substrate within a vacuum deposition chamber, by passing a length of substrate across a cooling block within a vacuum deposition chamber, with the cooling block configured to contact the substrate and passing a cooled liquid or gas through said cooling block during deposition of said layer of biaxially oriented material by ion beam assisted deposition upon said length of substrate.
    Type: Application
    Filed: July 27, 2005
    Publication date: February 1, 2007
    Inventors: Paul Arendt, Raymond DePaula, Liliana Stan, Igor Usov, James Groves
  • Publication number: 20070012975
    Abstract: Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.
    Type: Application
    Filed: July 13, 2006
    Publication date: January 18, 2007
    Inventors: Paul Arendt, Stephen Foltyn, Liliana Stan, Igor Usov, Haiyan Wang
  • Publication number: 20060286784
    Abstract: A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C.
    Type: Application
    Filed: May 23, 2006
    Publication date: December 21, 2006
    Inventors: Igor Usov, Paul Arendt