Patents by Inventor Igor V. Vernik

Igor V. Vernik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11906877
    Abstract: A system and method to convert a wideband optical signal to a multi-bit digital electrical signal using a superconducting integrated circuit. In a preferred embodiment, the optical signal modulates the phase (i.e., adjusts the timing) of a sequence of single-flux-quantum voltage pulses. The optoelectronic modulator may comprise an optically tunable Josephson junction, superconducting inductor, or bolometric detector, with switching speeds approaching 100 ps or less. The optical signal may comprise a plurality of optical signals such as a wavelength-division multiplexed signal. The optical-to-digital converter may be applied to high-speed digital communication switches, broadband digital input/output for superconducting or quantum computing, and control/readout of detector arrays.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: February 20, 2024
    Assignee: SeeQC, Inc.
    Inventors: Oleg A. Mukhanov, Igor V. Vernik
  • Patent number: 11823736
    Abstract: A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: November 21, 2023
    Assignee: SeeQC Inc.
    Inventors: Oleg Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik
  • Patent number: 11717475
    Abstract: A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: August 8, 2023
    Assignee: SeeQC, Inc.
    Inventors: Oleg A. Mukhanov, Alexander F. Kirichenko, Igor V. Vernik, Ivan P. Nevirkovets, Alan M. Kadin
  • Publication number: 20230239058
    Abstract: A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.
    Type: Application
    Filed: April 3, 2023
    Publication date: July 27, 2023
    Inventors: Igor V. Vernik, Oleg A. Mukhanov, Alan M. Kadin, Christopher T. Phare, Michal Lipson, Keren Bergman
  • Patent number: 11621786
    Abstract: A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.
    Type: Grant
    Filed: September 6, 2021
    Date of Patent: April 4, 2023
    Assignee: SeeQC, Inc.
    Inventors: Igor V. Vernik, Oleg A. Mukhanov, Alan M. Kadin, Christopher T. Phare, Michal Lipson, Keren Bergman
  • Patent number: 11406583
    Abstract: A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
    Type: Grant
    Filed: March 15, 2021
    Date of Patent: August 9, 2022
    Assignee: Seeqc, inc.
    Inventors: Oleg A. Mukhanov, Alexander F. Kirichenko, Igor V. Vernik, Ivan P. Nevirkovets, Alan M. Kadin
  • Publication number: 20220236623
    Abstract: A system and method to convert a wideband optical signal to a multi-bit digital electrical signal using a superconducting integrated circuit. In a preferred embodiment, the optical signal modulates the phase (i.e., adjusts the timing) of a sequence of single-flux-quantum voltage pulses. The optoelectronic modulator may comprise an optically tunable Josephson junction, superconducting inductor, or bolometric detector, with switching speeds approaching 100 ps or less. The optical signal may comprise a plurality of optical signals such as a wavelength-division multiplexed signal. The optical-to-digital converter may be applied to high-speed digital communication switches, broadband digital input/output for superconducting or quantum computing, and control/readout of detector arrays.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Inventors: Oleg A. Mukhanov, Igor V. Vernik
  • Patent number: 11300853
    Abstract: A system and method to convert a wideband optical signal to a multi-bit digital electrical signal using a superconducting integrated circuit. In a preferred embodiment, the optical signal modulates the phase (i.e., adjusts the timing) of a sequence of single-flux-quantum voltage pulses. The optoelectronic modulator may comprise an optically tunable Josephson junction, superconducting inductor, or bolometric detector, with switching speeds approaching 100 ps or less. The optical signal may comprise a plurality of optical signals such as a wavelength-division multiplexed signal. The optical-to-digital converter may be applied to high-speed digital communication switches, broadband digital input/output for superconducting or quantum computing, and control/readout of detector arrays.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: April 12, 2022
    Assignee: SeeQC Inc.
    Inventors: Oleg A. Mukhanov, Igor V. Vernik
  • Patent number: 11264089
    Abstract: A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: March 1, 2022
    Assignee: Seeqc, Inc.
    Inventors: Oleg A. Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik
  • Patent number: 11115131
    Abstract: A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: September 7, 2021
    Assignee: SeeQC Inc.
    Inventors: Igor V. Vernik, Oleg A. Mukhanov, Alan M. Kadin, Christopher T. Phare, Michal Lipson, Keren Bergman
  • Patent number: 10950299
    Abstract: A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: March 16, 2021
    Assignee: SeeQC, Inc.
    Inventors: Oleg A. Mukhanov, Alexander F. Kirichenko, Igor V. Vernik, Ivan P. Nevirkovets, Alan M. Kadin
  • Patent number: 10755775
    Abstract: A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: August 25, 2020
    Assignee: SeeQC Inc.
    Inventors: Oleg A. Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik
  • Patent number: 10725361
    Abstract: A system and method to convert a wideband optical signal to a multi-bit digital electrical signal using a superconducting integrated circuit. In a preferred embodiment, the optical signal modulates the phase (i.e., adjusts the timing) of a sequence of single-flux-quantum voltage pulses. The optoelectronic modulator may comprise an optically tunable Josephson junction, superconducting inductor, or bolometric detector, with switching speeds approaching 100 ps or less. The optical signal may comprise a plurality of optical signals such as a wavelength-division multiplexed signal. The optical-to-digital converter may be applied to high-speed digital communication switches, broadband digital input/output for superconducting or quantum computing, and control/readout of detector arrays.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: July 28, 2020
    Assignee: SeeQC Inc.
    Inventors: Oleg A. Mukhanov, Igor V. Vernik
  • Patent number: 10644809
    Abstract: A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: May 5, 2020
    Assignee: SeeQC Inc.
    Inventors: Igor V. Vernik, Oleg A. Mukhanov, Alan M. Kadin, Christopher Thomas Phare, Michal Lipson, Keren Bergman
  • Patent number: 10460796
    Abstract: A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
    Type: Grant
    Filed: February 5, 2018
    Date of Patent: October 29, 2019
    Assignee: SeeQC, Inc.
    Inventors: Oleg A. Mukhanov, Alexander F. Kirichenko, Igor V. Vernik, Ivan P. Nevirkovets, Alan M. Kadin
  • Patent number: 10097281
    Abstract: A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: October 9, 2018
    Assignees: Hypres, Inc., Center for Technology Licensing at Cornell University, The Trustees of Columbia University in the City of New York
    Inventors: Igor V. Vernik, Oleg A. Mukhanov, Alan M. Kadin, Christopher Thomas Phare, Michal Lipson, Keren Bergman
  • Patent number: 9627045
    Abstract: A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: April 18, 2017
    Assignee: Hypres, Inc.
    Inventors: Oleg A. Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik
  • Patent number: 9520180
    Abstract: A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: December 13, 2016
    Assignee: Hypres, Inc.
    Inventors: Oleg A. Mukhanov, Alexander F. Kirichenko, Igor V. Vernik, Ivan P. Nevirkovets, Alan M. Kadin
  • Patent number: 8971977
    Abstract: A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
    Type: Grant
    Filed: January 13, 2012
    Date of Patent: March 3, 2015
    Assignee: Hypres, Inc.
    Inventors: Oleg A. Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik
  • Publication number: 20120184445
    Abstract: A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.
    Type: Application
    Filed: January 13, 2012
    Publication date: July 19, 2012
    Applicant: HYPRES, INC.
    Inventors: Oleg A. Mukhanov, Alan M. Kadin, Ivan P. Nevirkovets, Igor V. Vernik