Patents by Inventor Igor Varvaruk

Igor Varvaruk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Analyses of measurement data
    Patent number: 9207530
    Abstract: A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: December 8, 2015
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Vladimir Dmitriev, Ofir Sharoni, Erez Graitzer, Igor Varvaruk, Guy Ben-Zvi
  • Critical dimension uniformity correction by scanner signature control
    Patent number: 9134112
    Abstract: A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: September 15, 2015
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Ofir Sharoni, Vladimir Dmitriev, Eran Chason, Guy Ben-Zvi, Igor Varvaruk
  • CRITICAL DIMENSION UNIFORMITY CORRECTION BY SCANNER SIGNATURE CONTROL
    Publication number: 20130077101
    Abstract: A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.
    Type: Application
    Filed: February 23, 2011
    Publication date: March 28, 2013
    Inventors: Ofir Sharoni, Vladimir Dmitriev, Eran Chason, Guy Ben-Zvi, Igor Varvaruk
  • ANALYSES OF MEASUREMENT DATA
    Publication number: 20130028505
    Abstract: A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.
    Type: Application
    Filed: February 23, 2011
    Publication date: January 31, 2013
    Inventors: Vladimir Dmitriev, Ofir Sharoni, Erez Graitzer, Igor Varvaruk, Guy Ben-Zvi