Abstract: A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi.sub.2 Te.sub.3 and Sb.sub.2 Te.sub.3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300.degree. C, and others at a temperature of not less than 350.degree. C.

Abstract: Disclosure is made of a thermoelement comprising a substrate having films of a semiconductor material of n- and p-types applied onto both sides thereof, which films make up the thermoelement branches. Each branch consists of two semiconductor films of one type of conductivity applied one opposite the other onto opposite sides of the substrate. Between the branches the substrate has a row of through holes and commutation buses which interconnect the branches, said buses being arranged on both sides of said row and electrically connected to each other through said holes. Disclosure is further made of a thermopile band upon the proposed thermoelement, which thermopile has a flexible substrate and is accordian-pleated along the rows of holes.