Abstract: Disclosed are treated mixed matrix polymeric membranes comprising a plurality of metal-organic frameworks (MOFs) and a polymeric matrix, wherein the plurality of MOFs are attached to the polymeric matrix through covalent or hydrogen bonds or Van der Waals interaction.

Abstract: Disclosed are polymeric blend membranes and methods for treating and using the membranes. The membranes include a blend of at least a polymer of intrinsic microporosity (PIM) and a second polymer, wherein the polymeric membrane has been treated with ultraviolet (UV) radiation and plasma.

Abstract: Disclosed are polymeric blend membranes, and methods for their use, they have been plasma-treated. The polymeric membranes include a polymeric blend of polymer of intrinsic microporosity (PIM) and a second polymer.

Abstract: Disclosed are polymeric blend membranes, and methods for their use, that include a blend of at least a first polymer and a second polymer, wherein the first and second polymers are each selected from a polymer of intrinsic microporosity (PIM), a polyetherimide (PEI) polymer, a polyimide (PI) polymer, or a polyetherimide-siloxane (PEI-Si) polymer, and wherein the polymeric membranes have been both ultraviolet (UV)-treated and thermally-treated.

Abstract: Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.

Abstract: A ferroelectric device comprising: a substrate; a first electrode disposed on the substrate; a ferroelectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer.

Abstract: Disclosed herein is a composite material comprising a relaxor ferroelectric material and a hydrazine-reduced graphene oxide, wherein the weight ratio of the composite material to the hydrazine-reduced graphene oxide is 9:1 to 200:1. The composite materials have high dielectric permittivity and low dielectric losses and can be used to manufacture various high dielectric permittivity components.

Abstract: Disclosed is a ferroelectric material and methods for its use in capacitors that includes a polymer blend of at least two polymers, wherein the first polymer is a ferroelectric polymer and the second polymer has a low dielectric constant.

Abstract: Disclosed herein is a composite material comprising a relaxor ferroelectric material and a hydrazine-reduced graphene oxide, wherein the weight ratio of the composite material to the hydrazine-reduced graphene oxide is 9:1 to 200:1. The composite materials have high dielectric permittivity and low dielectric losses and can be used to manufacture various high dielectric permittivity components.

Abstract: A ferroelectric device comprising: a substrate; a first electrode disposed on the substrate; a ferroelectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer.