Patents by Inventor Ihachiro Gofuku
Ihachiro Gofuku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6383050Abstract: The invention provides a getter of high performance capable of immediately absorbing a gas generated in an image forming apparatus, and an image forming apparatus exhibiting little luminance variation with the lapse of time and little luminance fluctuation. It also provides a method for producing a getter at a low temperature not effecting other components and in an arbitrary position in a simple manner with a low cost, thereby being adaptable to various processes. The invention relates to a process for forming a non-evaporative getter by a gas deposition method, and to a method of producing an image forming apparatus provided with an electron source, an image forming member for forming an image by irradiation with an electron beam emitted from the electron source, and a non-evaporative getter in a container, which comprises forming the non-evaporative getter by the above-mentioned process for forming the non-evaporative getter.Type: GrantFiled: January 11, 2000Date of Patent: May 7, 2002Assignee: Canon Kabushiki KaishaInventors: Junri Ishikura, Ihachiro Gofuku, Mitsutoshi Hasegawa
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Patent number: 6190911Abstract: A method for fabricating a semiconductor device having a wiring part connected via an opening portion formed in an insulting film on a semiconductor region to the semiconductor region. The wiring part includes a polycrystalline semiconductor layer and a metal or metal silicide on the semiconductor layer. A polycrystalline semiconductor layer is deposited over the opening portion of the semiconductor region. First and second impurities are respectively ion injected into the polycrystalline semiconductor layer, wherein the ion injecting range of the first impurities is longer than that of the second impurities, thereby forming a high concentration region at least on a surface side of the polycrystalline semiconductor layer. Following the ion injection of the first and second impurities, a heat treatment is conducted to grow crystals of the polycrystalline semiconductor layer. After the heat treatment, a metal or a metal silicide is deposited on the polycrystalline layer using a low melting point method.Type: GrantFiled: June 27, 1996Date of Patent: February 20, 2001Assignee: Canon Kabushiki KaishaInventor: Ihachiro Gofuku
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Patent number: 6127692Abstract: A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.Type: GrantFiled: October 26, 1993Date of Patent: October 3, 2000Assignee: Canon Kabushiki KaishaInventors: Shigetoshi Sugawa, Ihachiro Gofuku, Kazuaki Ohmi, Yoshiyuki Osada, Masato Yamanobe
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Patent number: 5985689Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.Type: GrantFiled: January 22, 1998Date of Patent: November 16, 1999Assignee: Canon Kabushiki KaishaInventors: Ihachiro Gofuku, Masato Yamanobe, Izumi Tabata, Hiraku Kozuka
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Patent number: 5973761Abstract: A liquid crystal device is formed by a pair of substrates, and a liquid crystal disposed between the substrates. At least one substrate has thereon a laminar structure including an electrode, an electrical property control layer and an alignment control layer contacting the liquid crystal disposed in this order on the substrate. The alignment control layer has a thickness of at most 100 .ANG., has been subjected to a uniaxial aligning treatment and has a volume resistivity larger than that of the electrical property control layer. The liquid crystal device thus constituted may exhibit a reduced influence of reverse electric field and a suppressed switching asymmetry over a wide temperature range.Type: GrantFiled: January 29, 1998Date of Patent: October 26, 1999Assignee: Canon Kabushiki KaishaInventors: Ihachiro Gofuku, Shinjiro Okada, Yasuto Kodera, Masahiro Terada, Fumikazu Kobayashi, Nobuhiro Ito
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Patent number: 5831705Abstract: A liquid crystal device is constituted by a pair of oppositely disposed substrates including a first substrate having a uniaxial alignment characteristic and a second substrate having a non-uniaxial alignment characteristic and a liquid crystal disposed between the first and second substrates. The first and second substrates are controlled to have surface potentials providing a difference therebetween of less than 50 mV in terms of an absolute value at their liquid crystal-contacting surfaces. As a result, the liquid crystal device is provided with an improved symmetry of switching threshold while retaining a good liquid crystal alignment characteristic.Type: GrantFiled: April 28, 1997Date of Patent: November 3, 1998Assignee: Canon Kabushiki KaishaInventors: Shuzo Kaneko, Ihachiro Gofuku, Etsuro Kishi, Makoto Kojima, Katsutoshi Nakamura
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Patent number: 5767560Abstract: A photoelectric conversion device including: a photoelectric conversion portion having a light absorbing layer disposed between charge injection inhibition layers and having a predetermined forbidden band width Eg.sub.1, and a carrier multiplication portion including a single or a plurality of inclined band gap layers, the inclined band gap layer including a minimum forbidden band width Eg.sub.2 and a maximum forbidden band width Eg.sub.3 which are disposed to be in contact with each other to form a hetero junction and having, at the two ends thereof, forbidden band widths Eg.sub.4 which holds a relationship Eg.sub.2 <Eg.sub.4 <Eg.sub.3 in such a manner that the forbidden band width is continuously changed from the two forbidden band widths Eg.sub.2 and Eg.sub.3 to the forbidden band width Eg.sub.4, and the energy step in a conductive band of the hetero junction portion is larger than the energy step in a valence electron band, wherein at least the minimum forbidden band width Eg.sub.Type: GrantFiled: November 30, 1994Date of Patent: June 16, 1998Assignee: Canon Kabushiki KaishaInventor: Ihachiro Gofuku
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Patent number: 5723877Abstract: A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.Type: GrantFiled: June 7, 1995Date of Patent: March 3, 1998Assignee: Canon Kabushiki KaishaInventors: Shigetoshi Sugawa, Ihachiro Gofuku, Kazuaki Ohmi, Yoshiyuki Osada, Masato Yamanobe
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Patent number: 5666217Abstract: A liquid crystal device is constituted by a pair of oppositely disposed substrates including a first substrate having a uniaxial alignment characteristic and a second substrate having a non-uniaxial alignment characteristic and a liquid crystal disposed between the first and second substrates. The first and second substrates are controlled to have surface potentials providing a difference therebetween of less than 50 mV in terms of an absolute value at their liquid crystal-contacting surfaces. As a result, the liquid crystal device is provided with an improved symmetry of switching threshold while retaining a good liquid crystal alignment characteristic.Type: GrantFiled: August 1, 1995Date of Patent: September 9, 1997Assignee: Canon Kabushiki KaishaInventors: Shuzo Kaneko, Ihachiro Gofuku, Etsur o Kishi, Makoto Kojima, Katsutoshi Nakamura
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Patent number: 5627088Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.Type: GrantFiled: September 29, 1993Date of Patent: May 6, 1997Assignee: Canon Kabushiki KaishaInventors: Masaki Fukaya, Soichiro Kawakami, Satoshi Itabashi, Katsunori Terada, Ihachiro Gofuku, Katsumi Nakagawa, Katsunori Hatanaka, Yoshinori Isobe, Toshihiro Saika, Tetsuya Kaneko, Nobuko Kitahara, Hideyuki Suzuki
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Patent number: 5453629Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.Type: GrantFiled: November 12, 1993Date of Patent: September 26, 1995Assignee: Canon Kabushiki KaishaInventors: Ihachiro Gofuku, Masato Yamanobe, Izumi Tabata, Hiraku Kozuka
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Patent number: 5414275Abstract: A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous P- or N-semiconductor layer in contact with the I-type layer and an amorphous P- or N-semiconductor layer containing microcrystalline structure.Type: GrantFiled: December 6, 1993Date of Patent: May 9, 1995Assignee: Canon Kabushiki KaishaInventors: Shigetoshi Sugawa, Ihachiro Gofuku
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Patent number: 5338690Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.Type: GrantFiled: July 9, 1992Date of Patent: August 16, 1994Assignee: Canon Kabushiki KaishaInventors: Masaki Fukaya, Soichiro Kawakami, Satoshi Itabashi, Katsunori Terada, Ihachiro Gofuku, Katsumi Nakagawa, Katsunori Hatanaka, Yoshinori Isobe, Toshihiro Saika, Tetsuya Kaneko, Nobuko Kitahara, Hideyuki Suzuki
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Patent number: 5308996Abstract: A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.Type: GrantFiled: June 29, 1993Date of Patent: May 3, 1994Assignee: Canon Kabushiki KaishaInventors: Satoshi Itabashi, Masaki Fukaya, Toshiyuki Komatsu, Yoshiyuki Osada, Ihachiro Gofuku
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Patent number: 5306648Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.Type: GrantFiled: July 1, 1992Date of Patent: April 26, 1994Assignee: Canon Kabushiki KaishaInventors: Masaki Fukaya, Soichiro Kawakami, Satoshi Itabashi, Katsunori Terada, Ihachiro Gofuku, Katsumi Nakagawa, Katsunori Hatanaka, Yoshinori Isobe, Toshihiro Saika, Tetsuya Kaneko, Nobuko Kitahara, Hideyuki Suzuki
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Patent number: 5245201Abstract: A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.Type: GrantFiled: December 31, 1991Date of Patent: September 14, 1993Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Shigetoshi Sugawa, Ihachiro Gofuku
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Patent number: 5128532Abstract: A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; and insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.Type: GrantFiled: February 14, 1991Date of Patent: July 7, 1992Assignee: Canon Kabushiki KaishaInventors: Satoshi Itabashi, Toshihiro Saika, Ihachiro Gofuku
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Patent number: 5097304Abstract: An image reading device has photo-sensor units arranged in the form of an array constituting a line sensor. Each sensor unit includes a light-shielding layer formed on a light-transmitting substrate, an insulating layer formed on the light-shielding layer, a semiconductor layer disposed on the insulating layer, and a pair of upper electrodes provided on the semiconductor layer and spaced from each other. The space between the upper electrodes constitutes a light-receiving window through which the semiconductor layer receives light applied from the reverse side of the substrate onto the surface of an image-carrying original and reflected by the original. Thus, the semiconductor layer produces an electric signal representing the read image. The light-shielding layer is made of an electrically conductive material such as a metal.Type: GrantFiled: November 14, 1990Date of Patent: March 17, 1992Assignee: Canon Kabushiki KaishaInventors: Satoshi Itabashi, Toshihiro Saika, Ihachiro Gofuku
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Patent number: 4931661Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.Type: GrantFiled: September 25, 1989Date of Patent: June 5, 1990Assignee: Canon Kabushiki KaishaInventors: Masaki Fukaya, Soichiro Kawakami, Satoshi Itabashi, Katsunori Terada, Ihachiro Gofuku, Katsumi Nakagawa, Katsunori Hatanaka, Yoshinori Isobe, Toshihiro Saika, Tetsuya Kaneko, Nobuko Kitahara, Hideyuki Suzuki
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Patent number: 4916304Abstract: A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; an insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.Type: GrantFiled: December 23, 1988Date of Patent: April 10, 1990Assignee: Canon Kabushiki KaishaInventors: Satoshi Itabashi, Toshihiro Saika, Ihachiro Gofuku