Abstract: The compact steam reformer of the present invention integrally comprises a housing; a reforming reactor having an upper mixing compartment for mixing natural gas and steam and a lower compartment for accommodating a catalyst bed; a natural gas feeding coiled pipe through which natural gas is introduced while being heated; a steam generating coiled pipe in which pure water is converted to steam by the exhaust; a metal fiber burner for heating the reforming reactor; a high-temperature converter for primarily removing carbon monoxide from a synthetic gas; a low-temperature converter for secondarily reducing the carbon monoxide level of the synthetic gas; and a heat exchanger, provided between the high-temperature converter and the low-temperature converter, for cooling the gas effluent from the high-temperature converter.

Abstract: Disclosed herein is a process for the preparation of dimethylether from hydrocarbons, including tri-reforming a feedstock mixture comprised of hydrocarbons, carbon dioxide and water vapor in the presence of a tri-reforming catalyst, to prepare a syngas, which then undergoes gas-phase direct synthesis into dimethylether in one step in the presence of a hybrid catalyst. According to the process of this invention, three main processes among typical syngas preparation processes are simultaneously performed, and then, the syngas thus obtained is prepared into dimethylether through a direct reaction in one step, thereby decreasing the apparatus cost and operation cost. In addition, all of the carbon dioxide separated and recovered from the unreacted material and by-products may be reused as reaction material, thus decreasing the generation of carbon dioxide and reducing the material cost.

Abstract: The present invention provides a method that can prevent an anti-diffusion film from being formed defectively on a porous dielectric film due to pores in method for forming metal wires in a semiconductor device in which the porous dielectric film is used as an insulating film between metal wires.

Abstract: Disclosed herein is a method of forming metal wirings for high voltage elements. According to the present invention, after a copper film is formed, a wet etch process using an interlayer insulating film as an etch mask is performed to pattern the copper film. It is thus possible to form copper wirings for high voltage elements the width of which is very wide. Furthermore, a wet etch process using a chemical aqueous solution is performed instead of a copper polishing process. The cost for forming a metal wiring can be thus saved. Moreover, by controlling a wet etch time, the space between metal wirings, which is narrower than a width of the metal wiring, can be secured sufficiently.

Abstract: Disclosed in a method of forming a metal line in a semiconductor device. The method includes the steps of sequentially forming a first etch stop film, a second interlayer insulating film and a BARC film on a first interlayer insulating film into which a metal line is buried, forming a photoresist pattern defining a trench in a given region of the BARC film, performing an etch process up to the second interlayer insulating film using the photoresist pattern as an etch mask to form a trench, removing the photoresist pattern and the BARC film by means of a first wet etch process, etching the first etch stop film by means of a second wet etch process using the second interlayer insulating film an as etch mask, and cleaning the resulting entire surface by means of a third wet etch process.

Abstract: Disclosed is a compact steam reformer which integrally comprises a housing; a reforming reactor having an upper mixing compartment for mixing natural gas and steam and a lower compartment for accommodating a catalyst bed; a natural gas feeding coiled pipe through which natural gas is introduced while being heated; a steam generating coiled pipe in which pure water is converted to steam by the exhaust; a metal fiber burner for heating the reforming reactor; a high-temperature converter for primarily removing carbon monoxide from a synthetic gas; a low-temperature converter for secondarily reducing the carbon monoxide level of the synthetic gas; and a heat exchanger, provided between the high-temperature converter and the low-temperature converter, for cooling the gas effluent from the high-temperature converter. The steam reformer enjoys the advantage of being easy to install in situ and being fabricated at low cost.