Abstract: A solar cell and method of manufacturing the same includes a semiconductor substrate having a textured surface and including a plurality of recess portions and a plurality of flat portions, an emitter layer in the plurality of recess portions, a first doping region in at least one of the plurality of flat portions, and doped with a first conductive type impurity selected from one of p-type and n-type impurities, a second doping region in at least one of the plurality of flat portions, and doped with a second conductive type impurity selected from one of p-type and n-type impurities that differs from the first conductive type impurity, and first and second electrodes electrically connected to the first and second doping regions, respectively. The distance between the emitter layer and the first doping region is different from the distance between the emitter layer and the second doping region.

Abstract: A solar cell includes a semiconductor substrate having a texturized surface, the semiconductor substrate including a plurality of recess portions and a plurality of flat portions, an insulation layer on the texturized surface of the semiconductor substrate and an electrode on the plurality of flat portions of the semiconductor substrate. The insulation layer on the plurality of recess portions of the semiconductor substrate is thinner than the insulation layer on the plurality of flat portions of the semiconductor substrate.

Abstract: A solar cell and method of manufacturing the same includes a semiconductor substrate having a textured surface and including a plurality of recess portions and a plurality of flat portions, an emitter layer in the plurality of recess portions, a first doping region in at least one of the plurality of flat portions, and doped with a first conductive type impurity selected from one of p-type and n-type impurities, a second doping region in at least one of the plurality of flat portions, and doped with a second conductive type impurity selected from one of p-type and n-type impurities that differs from the first conductive type impurity, and first and second electrodes electrically connected to the first and second doping regions, respectively. The distance between the emitter layer and the first doping region is different from the distance between the emitter layer and the second doping region.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

Abstract: Methods of forming integrated circuit capacitors include the steps of forming a first electrically conductive layer (e.g., polysilicon layer) on a substrate and then forming a masking layer on the first electrically conductive layer. The masking layer is then patterned to define an electrode mask having a constricted neck region therein with reduced transverse cross-sectional area (e.g., reduced width). A step is then performed to etch the first electrically conductive layer using the electrode mask as an etching mask. Upon performance of this etching step, a storage electrode is defined having a constricted neck region therein with reduced transverse cross-sectional area (e.g., reduced width and height). Notwithstanding the reduced cross-sectional area of the constricted neck region, the overall surface area of the storage electrode is increased relative to an electrode having the same general shape but no constricted neck region.