Abstract: The present invention proposes a method for fabricating a non-volatile memory device using nano-crystals with an increased etching rate and an increased oxidation rate at the grain boundary, which is used in high-speed and low power consumption device. The method for fabricating a non-volatile memory device using nano-crystal dots comprises following processes. First process is to fabricate a tunneling dielectric 204 and a thin amorphous silicon continuous film. Second process is to fabricate a poly-silicon layer by poly-crystallizing the amorphous silicon film. Third process is to fabricate nano-crystals 212 by etching the poly-silicon layer. Fourth process is to fabricate an interlayer dielectric 214 on the nano-crystals 212. Fifth process is to attach a poly-silicon film to the interlayer dielectric 214 and fabricate a gate 216 and interconnects 220.