Patents by Inventor II-Han Park

II-Han Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200171962
    Abstract: A vehicle and a method for controlling the same are provided to provide consistent deceleration feeling or acceleration feeling during creep driving even when the driving load of the vehicle is changed by determining a creep torque based on a target acceleration of a vehicle, may include a motor; a transmission; a vehicle speed sensor configured to detect a speed of the vehicle; and a controller configured to determine a target acceleration and a creep torque based on a current speed of the vehicle and a gear ratio of the transmission when the vehicle satisfies a creep driving condition, update the determined creep torque based on a difference value between a target speed according to the determined target acceleration and the current speed of the vehicle, and control the motor to transmit the updated creep torque to wheels of the vehicle.
    Type: Application
    Filed: April 5, 2019
    Publication date: June 4, 2020
    Applicants: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Hoon HAN, Kwonchae CHUNG, Jae Young CHOI, II Kwon PARK
  • Publication number: 20200098436
    Abstract: Nonvolatile memory device includes a memory cell array including pages, each of the pages including memory cells storing data bits, each of the data bits being selectable by a different threshold voltage, a page buffer circuit coupled to the memory cell array through bit-lines, the page buffer circuit including page buffers to sense data from selected memory cells, and perform a first read operation and a second read operation, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch configured to sequentially store results of the two sequential sensing operations, and a control circuit to control the page buffers to store a result of the first read operation, reset the latches after completion of the first read operation, and perform the second read operation based on a valley determined based on the result of the first read operation.
    Type: Application
    Filed: March 26, 2019
    Publication date: March 26, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung-Bum Kim, II-Han Park, Ji-Young Lee, Su-Chang Jeon
  • Publication number: 20200039342
    Abstract: A dual clutch transmission which can reduce the overall length of a transmission and improve mountability in the vehicle by simplifying the constituent elements of the transmission, is configured by reducing the number of synchronizers and external gears and shafts, and a drive motor is not disposed on the same axle as other constituent elements to reduce the overall length of the transmission, reducing cost and weight of the transmission to improve mountability of the transmission in the vehicle.
    Type: Application
    Filed: November 14, 2018
    Publication date: February 6, 2020
    Applicants: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Ju Hyeon PARK, Seong Wook JI, Ki Tae KIM, Dong Woo KIM, Hyun Sik KWON, II Han YOO, Seong Wook HWANG, Won Min CHO
  • Publication number: 20190392908
    Abstract: Provided is a nonvolatile memory device and an operating method thereof. The operating method for programming a first memory block from among a plurality of memory blocks includes: programming a first word line connected to the first memory block by sequentially executing first to Nth (N is a natural number) programming loops; applying a voltage generated by regulating a first pump voltage of a first charge pump to the first word line as a dummy verifying voltage after the programming is completed; generating a first detection count based on the first pump voltage and a first reference voltage; and outputting a bad block setting signal for setting the first memory block as a bad block based on a result of comparing the first detection count with the first reference count.
    Type: Application
    Filed: June 22, 2018
    Publication date: December 26, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae-yun LEE, II-Han PARK, Jun-yong PARK, Byung-soo KIM
  • Publication number: 20190371411
    Abstract: Provided are a nonvolatile memory and a method of operating the same. The nonvolatile memory includes a first sub-block defined by a first string select line and a first word line; a second sub-block defined by a second string select line different from the first string select line and a second word line different from the first word line; a first vacant block defined by the first string select line and the second word line; and a second vacant block defined by the second string select line and the first word line. First data is programmed in the first sub-block with, second data is programmed in the second sub-block, and no data is programmed in the first vacant block and the second vacant block.
    Type: Application
    Filed: May 15, 2019
    Publication date: December 5, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyun SEO, Kui Han KO, Jin-Young KIM, II Han PARK, Bong Soon LIM
  • Publication number: 20190348122
    Abstract: A method of operating a nonvolatile memory device is provided where the nonvolatile memory device includes a plurality of cell strings, and each cell string includes a plurality of multi-level cells. a voltage of a selected word line is sequentially changed to sequentially have a plurality of read voltages for determining threshold voltage states of the plurality of multi-level cells. A voltage of an adjacent word line adjacent to the selected word line is sequentially changed in synchronization with voltage changing time points of the selected word line. A load of the selected word line is reduced and an operation speed of the nonvolatile memory device is increased by synchronizing the voltage change of the selected word line and the voltage change of the adjacent word line in the same direction.
    Type: Application
    Filed: December 17, 2018
    Publication date: November 14, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kui-Han KO, Jin-Young Kim, II-Han Park, Bong-Soon Lim
  • Publication number: 20190287629
    Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.
    Type: Application
    Filed: October 8, 2018
    Publication date: September 19, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jin Bae BANG, Seung Hwan SONG, Dae Seok BYEON, II Han PARK, Hyun Jun YOON, Han Jun LEE, Na Young CHOI
  • Publication number: 20190152311
    Abstract: A transmission for electric vehicles may include a first input shaft receiving a rotational force from a first motor; a second input shaft receiving a rotational force from a second motor; a one-way clutch mounted between the first and second input shafts, transferring only a forward rotation of the first input shaft to the second input shaft, and transferring only a reverse rotation of the second input shaft to the first input shaft; an output shaft disposed in parallel to the first and second shafts; a gear shifting device coupled to the first input shaft and the output shaft and coupled to the second input shaft and the output shaft, wherein the gear pairs have different shift ratios, and a gear pair corresponding to a driving speed is selected by a clutch device; and an idler gear coupled between gears coupled to the second input shaft and the output shaft.
    Type: Application
    Filed: March 9, 2018
    Publication date: May 23, 2019
    Applicants: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Soon Ki Eo, Seong Wook Hwang, Chon Ok Kim, II Han Yoo, Jong Yun Park, Seong Wook Ji
  • Publication number: 20190147961
    Abstract: A memory device can include: a memory cell array including a memory cell and a word line that is connected to the memory cell; a clock generator configured to generate a first pumping clock signal from a system clock signal; a charge pump configured to provide a pumping voltage signal using a power supply voltage and the first pumping clock signal; a compensation circuit configured to compensate for variations in a first reference clock signal in accordance with variations in the power supply voltage, and provide a compensated first reference clock signal; and a pass/fail (P/F) determining circuit configured to determine whether the word line is defective by comparing the first pumping clock signal and the compensated first reference clock signal while the pumping voltage signal is provided to the word line.
    Type: Application
    Filed: June 21, 2018
    Publication date: May 16, 2019
    Inventors: Jae-Yun Lee, Joon Soo Kwon, Byung Soo Kim, Sang-Soo Park, II Han Park, Jong-Hoon Lee
  • Publication number: 20150267943
    Abstract: A terminal may be provided with a magnetic regenerator unit using a magnetocaloric effect of magnetocaloric materials and a magnetic cooling system having the same. By a circular magnetic regenerator structure capable of evenly flowing heat transfer fluid and magnetic field and the flow of the heat transfer fluid being changed in the same way, and a magnetic band having a relative permeability, similar to a relative permeability of the magnetic regenerator, high efficiency of a flux generator may be obtained while reducing torque of a rotator. Power consumption for driving may be reduced due to the reduction of the cogging torque, and the magnetic band may be manufactured at a low cost by using inexpensive iron powder.
    Type: Application
    Filed: March 9, 2015
    Publication date: September 24, 2015
    Applicants: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
    Inventors: Jin Han KIM, II Han PARK, Keon KUK, Woo Hyek CHOI
  • Publication number: 20090242965
    Abstract: A memory cell device having a vertical channel and a double gate structure is provided. More specifically, a memory cell device having a vertical channel and a double gate structure is characterized by having a pillar active region with a predetermined height, which is including a first semiconductor layer forming a first source/drain region, a second semiconductor layer being placed under the first semiconductor layer with a predetermined distance and forming a second source/drain region, and a third semiconductor layer forming a body region and a channel region between the first semiconductor layer and the second semiconductor layer, and therefore, there is no need for unnecessary contacts when it is used as a unit cell for any type of memory array, not to speak of NOR type flash memory array. And the present invention makes to program/erase more effectively and increase the read speed and the amount of sensing current.
    Type: Application
    Filed: September 20, 2007
    Publication date: October 1, 2009
    Applicant: SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Byung Gook Park, II Han Park
  • Patent number: 7432552
    Abstract: A body biasing structure of devices connected in series on an SOI substrate is provided. According to some embodiments, the shallow junction of common source/drain regions enables all devices to bias by only one body contact on an SOI substrate like a conventional bulk MOSFET, and the floating body effect on an SOI substrate can be prevented.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: October 7, 2008
    Assignees: Seoul National University Industry Foundation, Samsung Electronics Co., Ltd.
    Inventors: Byung-Gook Park, Tae-Hoon Kim, II-Han Park