Abstract: A backlight unit including a backlight module and a backlight control module. The backlight module includes a printed circuit board including blocks arranged in an M×N matrix, in which M and N are natural numbers of 2 or greater, and M blocks are arranged in a horizontal direction and N blocks are arranged in a vertical direction, and at least one light emitting device disposed on each of the blocks. The backlight control module is configured to perform a dimming control of the M×N blocks such that the at least one light emitting device in one block can be controlled independently from other light emitting devices disposed in the remaining blocks that are disposed in the horizontal direction and in the vertical direction with respect to the one block.

Abstract: A direct type backlight unit disposed under a liquid crystal panel includes a backlight module including a printed circuit board including blocks arranged in an M×N matrix, in which M and N are natural numbers of 2 or greater, light emitting devices disposed on the printed circuit board such that at least one light emitting device is disposed in each block, each of the light emitting devices including light emitting cells disposed on a single substrate, and optical members disposed on the light emitting devices, each of the optical members being configured to change a light beam distribution of a corresponding light emitting device, and a backlight control module configured to control dimming levels of the light emitting devices and to independently control the light emitting devices disposed in different blocks.

Abstract: A light emitting module includes: a substrate having a recess part formed thereon; a body surrounding some of side surfaces and an upper surface of the substrate; a light emitting diode chip positioned on the recess part of the substrate; and a lens positioned on the body, wherein the substrate includes a first step part positioned along an edge of the recess part and a second step part positioned along an edge of a lower surface thereof, and the lower surface of the substrate is exposed to the outside.

Abstract: Disclosed are a group III-V based transistor and a method for manufacturing same. The group III-V based transistor includes a laminated semiconductor structure having an upper surface and a lower surface and including a group III-V based semiconductor layer, and at least one 2DEG region extending from the upper surface of the laminated semiconductor structure to the lower surface thereof. A vertical-type GaN-based transistor using 2DEG can be provided by adopting the 2DEG region.

Abstract: Embodiments of the disclosure provide a backlight module using MJT LEDs and a backlight unit including the same. More specifically, embodiments of the disclosure provide a backlight module, which includes MJT LEDs configured to increase an effective light emitting area of each of light emitting cells and optical members capable of uniformly dispersing light emitted from the MJT LEDs. In addition, embodiments of the disclosure provide a backlight unit using the backlight module, thereby reducing the number of LEDs constituting the backlight unit while allowing operation at low current.

Abstract: A display device includes a power rectifying unit for rectifying alternating power, a power factor correction unit correcting the power factor of the alternating power and outputting a power factor corrected voltage containing a direct current voltage component having at least a predetermined size, a display module driven by the power factor corrected voltage, a backlight unit, and a driving unit supplying the main driving voltage to a backlight unit, receiving the power factor corrected voltage when the size of the rectified voltage is smaller than a preset threshold value to generate a supplementary driving voltage.