Abstract: The present invention relates to a power semiconductor module including a first heat dissipation substrate, a semiconductor chip, a lead plate, a PCB, and a heat dissipation plate that are packaged within a casing, wherein dualization of a heat dissipation structure is applied to facilitate superior heat dissipation performance compared to a conventional power semiconductor module.

Abstract: The present invention relates to a method of producing a ceramic substrate, the method including: joining a metal layer to each of opposite surfaces of a ceramic base material; forming, on the metal layers, a first electrode layer and a second electrode layer having a larger volume than the first electrode layer; calculating the volumes of the first and second electrode layers; and controlling a thickness of the second electrode layer, thereby controlling warpage which may occur due to a difference between the volumes of the first and second electrode layers. The present invention can reduce the defect rate of a ceramic substrate by controlling warpage that may occur due to the difference in volume taken up by the metal layers on the opposite surfaces of the base material.

Abstract: A ceramic substrate is provided in which an inclined protrusion is formed on boundary surface of a metal layer bonded to a ceramic base so as to increase bonding strength; and a manufacturing method therefor. The inclined protrusion may include: a tapered protrusion and a multi-stepped protrusion formed on the boundary surface of the metal layer according to an interval between the metal layer bonded to the ceramic base and a neighboring metal layer, wherein a multi-stepped protrusion having an inclination angle within a predetermined angle range with respect to the ceramic base may be formed on the boundary surface of the metal layer where stress is concentrated, such as the short edge, apex, corner, and the like, and a tapered protrusion may be formed on a remaining portion of the boundary surface of the metal layer.

Abstract: The present invention relates to a method of producing a ceramic substrate, the method including: joining a metal layer to each of opposite surfaces of a ceramic base material; forming, on the metal layers, a first electrode layer and a second electrode layer having a larger volume than the first electrode layer; calculating the volumes of the first and second electrode layers; and controlling a thickness of the second electrode layer, thereby controlling warpage which may occur due to a difference between the volumes of the first and second electrode layers. The present invention can reduce the defect rate of a ceramic substrate by controlling warpage that may occur due to the difference in volume taken up by the metal layers on the opposite surfaces of the base material.

Abstract: The present invention relates to a power semiconductor module including a first heat dissipation substrate, a semiconductor chip, a lead plate, a PCB, and a heat dissipation plate that are packaged within a casing, wherein dualization of a heat dissipation structure is applied to facilitate superior heat dissipation performance compared to a conventional power semiconductor module.

Abstract: A ceramic substrate is provided in which an inclined protrusion is formed on boundary surface of a metal layer bonded to a ceramic base so as to increase bonding strength; and a manufacturing method therefor. The inclined protrusion may include: a tapered protrusion and a multi-stepped protrusion formed on the boundary surface of the metal layer according to an interval between the metal layer bonded to the ceramic base and a neighboring metal layer, wherein a multi-stepped protrusion having an inclination angle within a predetermined angle range with respect to the ceramic base may be formed on the boundary surface of the metal layer where stress is concentrated, such as the short edge, apex, corner, and the like, and a tapered protrusion may be formed on a remaining portion of the boundary surface of the metal layer.

Abstract: The present invention relates to a method for filling a via hole in a ceramic substrate and a filler for the via hole in the ceramic substrate filled using the same. The via hole is formed in a ceramic base material, and a conductor is formed in the via hole, melted in a vacuum state, and cooled, so that the via hole in the ceramic substrate is simply filled with the conductor without any voids. Accordingly, the manufacturing process of the ceramic substrate is simplified, manufacturing costs are reduced, the operational reliability of the ceramic substrate is improved, and stable operational reliability is secured when the ceramic substrate is used in a high-power semiconductor module.

Abstract: A method for manufacturing a backlight unit and a backlight apparatus are provided. The backlight unit includes a printed circuit board (“PCB”) having a plurality of inserting holes, a plurality of light-emitting diode (“LED”) package having a heat sink and inserted into the inserting hole and exposing the heat sink at a side of the PCB and a bottom chassis combining to the PCB. The heat sink of LED package is adhering to the bottom chassis. According to the present invention, the heat dissipation improves since the heat sink makes direct contact to the bottom chassis.

Abstract: A side view type light emitting diode (LED) and a method of manufacturing the same are disclosed. In one embodiment, the LED includes i) a pair of lead frames, ii) a reflector surrounding the lead frames, wherein a groove is defined in the reflector, wherein the reflector comprises a plurality of walls surrounding the groove, and wherein at least two walls of the groove face each other, iii) an LED chip mounted in the groove and electrically connected to the lead frames and iv) a lens array contained in the groove.

Abstract: A side view type light emitting diode and a method of manufacturing the same are disclosed. The method may include (a) providing lead frames which include a cathode terminal and an anode terminal, (b) forming a reflector which surrounds the lead frames, such that portions of the cathode terminal and anode terminal protrude from both sides, and which includes a groove open in the upward direction and a wall surrounding the groove, (c) die-attaching an LED chip onto the lead frames inside the groove, (d) bonding the LED chip to the cathode terminal or to the anode terminal with a conductive wire, (e) dispensing a liquid curable resin into the groove to form a lens part and (f) sawing the walls facing each other using a sawing machine such that the thicknesses at the upper surfaces are about 0.04 mm to about 0.05 mm.

Abstract: Disclosed is a side view light emitting diode (LED) package whose light emitting surface has been relatively expanded. The LED package includes a housing and a lead frame extended externally through the housing and bent in a direction of the recessed space. The housing includes a reflecting housing having a cavity and a supporting housing.

Abstract: A side view type light emitting diode and a method of manufacturing the same are disclosed. The method may include (a) providing lead frames which include a cathode terminal and an anode terminal, (b) forming a reflector which surrounds the lead frames, such that portions of the cathode terminal and anode terminal protrude from both sides, and which includes a groove open in the upward direction and a wall surrounding the groove, (c) die-attaching an LED chip onto the lead frames inside the groove, (d) bonding the LED chip to the cathode terminal or to the anode terminal with a conductive wire, (e) dispensing a liquid curable resin into the groove to form a lens part and (D sawing the walls facing each other using a sawing machine such that the thicknesses at the upper surfaces are about 0.04 mm to about 0.05 mm.

Abstract: A light emitting diode (LED) package is disclosed. In one embodiment, the LED package includes an LED, which emits light corresponding to an electric signal and a substrate, which is mounted to electrically couple to the LED and has an anode lead frame and a cathode lead frame. The package also includes a voltage regulator diode, which is mounted on the substrate and has a parallel connection with the LED to maintain voltage regulation. The LED package further includes a shielding dam, which is located between the LED and the voltage regulator diode and prevents light emitted by the LED from being directly irradiated to and reflected or absorbed by the voltage regulator diode. In at least one embodiment, the LED package can prevent the light emitted by the LED from being directly absorbed by the voltage regulator diode.

Abstract: A semiconductor chip package and a fabrication method thereof can reduce fabrication time and cost by consecutively fabricating a semiconductor chip to the package at a wafer level. The method for fabricating the semiconductor chip package includes a step of forming the semiconductor chip having a plurality of pads at its upper portion on a wafer, a step of forming a low elastic modulus material layer 22, such as a silicone on the wafer except the pads by a spin coating process or a sputtering process, a step of forming metal patterns on the pads and the low elastic modulus material layer by a metal thin film deposition process or a photo lithography process, a step of forming a high elastic modulus material layer on the metal patterns and the low elastic modulus material layer, a step of partially exposing the upper portions of the metal patterns, and a step of boding electric media to the exposed metal patterns.