Patents by Inventor Iksu Byun

Iksu Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing apparatus and semiconductor device manufacturing method using the same
    Patent number: 11929239
    Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 ?cm to 1000 ?cm.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: March 12, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sejin Oh, Iksu Byun, Taemin Earmme, Jongwoo Sun, Jewoo Han
  • PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
    Publication number: 20220223385
    Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 ?cm to 1000 ?cm.
    Type: Application
    Filed: September 3, 2021
    Publication date: July 14, 2022
    Inventors: Sejin Oh, Iksu Byun, Taemin Earmme, Jongwoo Sun, Jewoo Han
  • Method of etching at low temperature and plasma etching apparatus
    Patent number: 10818503
    Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: October 27, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Cheonkyu Lee, Moonseok Kim, Iksu Byun, Changwoo Song, Seongha Jeong, Dongseok Han
  • METHOD OF ETCHING AT LOW TEMPERATURE AND PLASMA ETCHING APPARATUS
    Publication number: 20190385860
    Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.
    Type: Application
    Filed: January 29, 2019
    Publication date: December 19, 2019
    Inventors: CHEONKYU LEE, Moonseok Kim, Iksu Byun, Changwoo Song, Seongha Jeong, Dongseok Han