Abstract: In a liquid crystal display device including a pair of substrates which face each other with a liquid crystal layer disposed therebetween, a plurality of pixel regions which are formed on one substrate, a planar counter electrode which is formed on each pixel region, and a comb-shaped or slit-shaped pixel electrode which is formed on each pixel region, the comb-shaped or slit-shaped pixel electrode being formed over the counter electrode by way of an insulation layer, a notch or a slit is formed in the counter electrode such that a wiring layer made of an opaque material which transmits a potential to the pixel electrode from a thin film transistor defines a region where the wiring layer is not overlapped relative to the counter electrode.

Abstract: A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second substrate and a liquid crystal sandwiched between the first substrate and the second substrate. The liquid crystal display device further comprises semiconductor elements (FG) formed over the first substrate and arranged in a matrix, and a light shielding film (BS) formed over the first substrate for blocking the light which would enter the semiconductor elements from the display face of the liquid crystal display device if not blocked.

Abstract: A method for forming a liquid crystal display device, which includes steps of forming a metal film over a substrate, patterning the metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element, and forming a first insulating film over the metal film. The steps further include forming a first polycrystalline-silicon layer over the first insulating film, and patterning the first polycrystalline-silicon layer to form a second capacitor electrode as a part of the first capacity element and a second capacity element, while additionally including the steps forming a second insulating film over the polycrystalline-silicon layer, forming a second polycrystalline-silicon layer over the second insulating film, and patterning the second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of the second capacity element.