Abstract: A wafer support device 20 includes an electrostatic chuck 22 provided to attract a silicon wafer W as an object of plasma processing, a protection ring 30 mounted on a step 26 of the electrostatic chuck 22, a cooling plate 40 placed on a rear face of the electrostatic chuck 22 to cool down the electrostatic chuck 22, and a coolant gas flow path 50 arranged to supply a flow of a coolant gas for cooling down the protection ring 30. The protection ring 30 has a skirt 34 arranged to cover over a side face of the electrostatic chuck 22. The coolant gas flow path 50 is formed to make the coolant gas flow from a rear face of the cooling plate 40 through an outer circumferential area 48 of an adhesive sheet 47 to be spread over and collide against a whole circumference on an inner wall of the skirt 34 of the protection ring 30.

Abstract: A wafer support device 20 includes an electrostatic chuck 22 provided to attract a silicon wafer W as an object of plasma processing, a protection ring 30 mounted on a step 26 of the electrostatic chuck 22, a cooling plate 40 placed on a rear face of the electrostatic chuck 22 to cool down the electrostatic chuck 22, and a coolant gas flow path 50 arranged to supply a flow of a coolant gas for cooling down the protection ring 30. The protection ring 30 has a skirt 34 arranged to cover over a side face of the electrostatic chuck 22. The coolant gas flow path 50 is formed to make the coolant gas flow from a rear face of the cooling plate 40 through an outer circumferential area 48 of an adhesive sheet 47 to be spread over and collide against a whole circumference on an inner wall of the skirt 34 of the protection ring 30.

Abstract: A substrate support according to the present invention includes a ceramic base 12 having an upper surface on which a substrate is placed; a first conductive body 16 having a plate-type body, composed of a conductive paste that is sintered, and embedded in an upper side of the ceramic base 12; a second conductive body 18 having a meshed-type body, provided inside the ceramic base 12, and being in contact with a lower surface of the first conductive body 16; and an electrode terminal 20 penetrating a part of the ceramic base 12 from a lower surface of the ceramic base 12 and is connected to the second conductive body 18.