Abstract: A hydrogen production system and a hydrogen production method include a heat exchanger that heats steam by using a heating medium heated by thermal energy at 600° C. or higher, a high-temperature steam electrolysis device that produces hydrogen by using the steam, and a heating device that heats the high-temperature steam electrolysis device by using the steam.

Abstract: A high-temperature steam electrolysis device, a hydrogen production method, and a hydrogen production system include: a high-temperature steam electrolysis cell having a cylindrical shape in which a hydrogen/steam gas diffusion electrode layer is disposed on an inner side of an electrolyte layer and an oxygen gas diffusion electrode layer is disposed on an outer side thereof; a steam flow channel in which high-temperature steam flows on an inner side of the high-temperature steam electrolysis cell; and a helium flow channel in which high-temperature helium flows to heat the high-temperature steam electrolysis cell on an outer side of the high-temperature steam electrolysis cell.

Abstract: A hydrogen production system and a hydrogen production method include a heat source that can generate thermal energy at 600° C. or higher, a heat exchanger that heats steam by using a heating medium heated by the thermal energy, a high-temperature steam electrolysis device that produces hydrogen by using the steam heated by the heating medium, and a heating device that heats the high-temperature steam electrolysis device by using the heating medium heated by the thermal energy.

Abstract: Metals are smelted properly. An electrolytic smelting furnace includes a furnace body, a furnace bottom electrode provided at a bottom part in the furnace body, and an upper electrode provided above the furnace bottom electrode in the furnace body, and the upper electrode includes a conductive compound with a spinel-type structure.

Abstract: An electrolytic smelting system includes: an electrolytic smelting furnace including a furnace body to which a molten ore is introduced, a cathode substrate which is installed on a bottom portion in the furnace body, and an anode substrate which is positioned above the cathode substrate in the furnace body; an inert gas circulation unit including a circulation line to recover an inert gas supplied into the electrolytic smelting furnace together with oxygen and supply the inert gas to the molten ore; and an oxygen-removing unit which is installed in the circulation line and which removes oxygen from the circulation line.

Abstract: A corrosion sensor includes an inner electrode formed of a conductive material, the inner electrode including a columnar portion around an axial line as a center thereof and of which an outer circumferential surface is tapered, wherein a diameter of the outer circumferential surface decreases toward one side in an axial direction, an outer electrode formed of a conductive material, the outer electrode including a cylindrical portion around the axial line and of which an inner circumferential surface is tapered, wherein a diameter of the inner circumferential surface decreases toward the one side in the axial direction, and the cylindrical portion is positioned such that the inner circumferential surface radially faces the outer circumferential surface, and an insulation layer formed of an insulation material and in a position across which the outer circumferential surface faces the inner circumferential surface.

Abstract: A corrosion sensor includes an inner electrode formed of a conductive material, including a columnar portion around an axial line as a center thereof and of which an outer circumferential surface is tapered, wherein a diameter of the tapered outer circumferential surface is gradually reduced as it moves toward one side in an axial direction, an outer electrode formed of a conductive material, including a cylindrical portion around the axial line and of which an inner circumferential surface is tapered, wherein a diameter of the tapered inner circumferential surface is gradually reduced as it moves toward the one side in the axial direction, and the cylindrical portion is provided such that the tapered inner circumferential surface radially faces the tapered outer circumferential surface, and an insulation layer formed of an insulation material and installed in a place across which the tapered outer circumferential surface faces the tapered inner circumferential surface.

Abstract: Catalyst support means for producing a fluid catalyst; a reduction basin that pretreats an active metal of the obtained fluid catalyst in a reducing atmosphere; a fluid bed reactor which is supplied with a reduction-treated fluid catalyst having undergone the reduction, for producing a nanocarbon material; and a moisture application basin for supplying a slight amount of moisture to a source gas to be supplied to the aforementioned fluid bed reactor are provided.

Abstract: Catalyst support means for producing a fluid catalyst; a reduction basin that pretreats an active metal of the obtained fluid catalyst in a reducing atmosphere; a fluid bed reactor which is supplied with a reduction-treated fluid catalyst having undergone the reduction, for producing a nanocarbon material; and a moisture application basin for supplying a slight amount of moisture to a source gas to be supplied to the aforementioned fluid bed reactor are provided.

Abstract: An object is to reduce changes in mechanical properties of a gas turbine blade base material during repair or regeneration of a gas turbine blade. For this purpose, a gas turbine blade after being operated is washed by being immersed into a strong alkaline washing solution, and the gas turbine blade after being washed with the strong alkaline washing solution is washed with water. The gas turbine blade after being washed with water is then washed by being immersed into a weak acid washing solution, and the gas turbine blade after being washed with the weak acid washing solution is subjected to heat treatment. The gas turbine blade after the heat treatment is then immersed into a strong acid washing solution, whereby the coating formed on the surface of the gas turbine blade is removed.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: An object is to reduce changes in mechanical properties of a gas turbine blade base material during repair or regeneration of a gas turbine blade. For this purpose, a gas turbine blade after being operated is washed by being immersed into a strong alkaline washing solution, and the gas turbine blade after being washed with the strong alkaline washing solution is washed with water. The gas turbine blade after being washed with water is then washed by being immersed into a weak acid washing solution, and the gas turbine blade after being washed with the weak acid washing solution is subjected to heat treatment. The gas turbine blade after the heat treatment is then immersed into a strong acid washing solution, whereby the coating formed on the surface of the gas turbine blade is removed.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor absorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.