Abstract: To suppress deterioration of imaging characteristics. A solid-state imaging device includes a photoelectric conversion section provided inside a semiconductor substrate, the photoelectric conversion section being configured to generate electric charges in accordance with an amount of received light, a plurality of vertical transfer gates arranged between the photoelectric conversion section and one principal surface of the semiconductor substrate in a depth direction of the semiconductor substrate and spaced apart from each other in a direction along a substrate surface of the semiconductor substrate, the plurality of vertical transfer gates each being configured to control transfer of the electric charges generated by the photoelectric conversion section, and an electric charge storage section disposed between the plurality of vertical transfer gates, the electric charge storage section being configured to store the electric charges transferred by the plurality of vertical transfer gates.

Abstract: A solid-state imaging device capable of weakening incident light that passes through an effective pixel region and enters an optical black pixel region. Among a plurality of straight groove portions constituting a trench portion, a first straight groove portion is formed at a boundary between an effective pixel region and an optical black pixel region (OPB pixel region), a plurality of second straight groove portions are formed in the OPB pixel region and parallel to the boundary in a plan view, and a third straight groove portion is formed between photoelectric conversion units in the effective pixel region, a specific straight groove portion, the specific straight groove portion being the first groove portion and/or being one or more of the plurality of second straight groove portions, has a different shape from the third straight groove portion, and a light shielding material is embedded in the specific straight groove portion.