Abstract: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

Abstract: In a thin-film field effect transistor with a MIS structure, the materials of which the semiconductor and insulating layers are made are polymers which are dissolvable in organic solvents and have a weight average molecular weight of more than 2,000 to 1,000,000. Use of polymers for both the semiconductor layer and insulating layer of TFT eliminates such treatments as patterning and etching using photoresists in the prior art circuit-forming technology, reduces the probability of TFT defects and achieves a reduction of TFT manufacture cost.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.

Abstract: Provided are a solid dosage form comprising an enteric solid dispersion that allows a drug in the preparation to be rapidly dissolved without compromising the solubility of the solid dispersion, and a method for producing the same. More specifically, provided is a solid dosage form comprising an enteric solid dispersion comprising a poorly soluble drug, an enteric polymer and a disintegrant, wherein the disintegrant is low-substituted hydroxypropylcellulose having an average particle size of 10 to 100 ?m and a specific surface area measured by BET method of at least 1.0 m2/g. Moreover, provided is a method for producing a solid dosage form comprising an enteric solid dispersion, the method comprising steps of: spraying an enteric polymer solution in which a poorly soluble drug has been dispersed or dissolved, on a powder of low-substituted hydroxypropylcellulose having an average particle size of 10 to 100 ?m and a specific surface area measured by BET method of at least 1.

Abstract: Provided are a solid dosage form comprising a solid dispersion that allows a drug in the preparation to be rapidly dissolved without compromising the solubility of the solid dispersion, and a method for producing the same. More specifically, provided is a solid dosage form comprising a solid dispersion, the dispersion comprising: a poorly soluble drug, a water-soluble polymer and a disintegrant, wherein the disintegrant is low-substituted hydroxypropylcellulose having an average particle size of 10 to 100 ?m and a specific surface area measured by BET method of at least 1.0 m2/g. Moreover, provided is a method for producing a solid dosage form comprising a solid dispersion, the method comprising steps of: spraying a water-soluble polymer solution in which a poorly soluble drug has been dispersed or dissolved, on a powder of low-substituted hydroxypropylcellulose having an average particle size of 10 to 100 ?m and a specific surface area measured by BET method of at least 1.

Abstract: The present invention is an enteric coated granule having controlled dissolution in water even at a small coating amount; and a preparation method thereof.

Abstract: An organic solid electrolyte comprises a polymer obtained by (co)polymerization of cyanoethyl acrylate and/or cyanoethyl methacrylate, the polymer being doped with an inorganic ion salt. The electrolyte has a high ionic conductivity and is based on a hydroxyl-free polymer so that it may be used to construct a secondary battery which eliminates the risk of gas evolution.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: Provided are a granule or a tablet of a solid dispersion that allows a drug in a preparation to be rapidly dissolved without impairing the dissolution of the solid dispersion, and a method for producing the same.

Abstract: Provided are a solid preparation comprising an enteric solid dispersion that allows a drug in the preparation to be rapidly dissolved without impairing the dissolution of the solid preparation, and a method for producing the same. More specifically, provided are a solid preparation comprising a poorly soluble drug, an enteric polymer, an excipient and a disintegrator, a mixed powder comprising at least the excipient and the disintegratior is partly or entirely covered with a solid dispersion comprising the poorly soluble dug and the enteric polymer; and a method for producing a solid preparation, comprising steps of: spraying an enteric polymer solution in which a poorly soluble drug has been dispersed or dissolved, on a mixed powder comprising an excipient and a disintegrator; and granulating and drying a resultant.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and thereafter, forming a semiconductor layer thereon.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

Abstract: In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and thereafter, forming a semiconductor layer thereon.

Abstract: A release sustaining composition comprising a polyalkylene polyol derivative comprising repeating units U-1 derived from a water-soluble polyalkylene polyol and a polyisocyanate and repeating units U-2 derived from a dihydroxy compound and a polyisocyanate in a molar ratio of U-1/U-2 between 0.5/0.5 and 0.99/0.01 and optionally a water-soluble cellulose ether is combined with an active ingredient to make a sustained release preparation.

Abstract: In a thin-film field effect transistor with a MIS structure, the materials of which the semiconductor and insulating layers are made are polymers which are dissolvable in organic solvents and have a weight average molecular weight of more than 2,000 to 1,000,000. Use of polymers for both the semiconductor layer and insulating layer of TFT eliminates such treatments as patterning and etching using photoresists in the prior art circuit-forming technology, reduces the probability of TFT defects and achieves a reduction of TFT manufacture cost.

Abstract: Disclosed is a novel organosilicon-containing derivative of pullulan of which an organopolysiloxane moiety having a silethylene linkage is bonded to the glucose residue of pullulan through a urethane linkage. Different from conventional organopolysiloxane-modified pullulans, the inventive derivative is stable against attack of water and exhibits unique properties as a combination of the properties inherent in pullulan and in silicones. The organosilicon-containing pullulan of the invention can be easily prepared under mild reaction conditions by reacting an isocyanato group-containing organopolysiloxane with the glucosic hydroxy groups of pullulan.

Abstract: Disclosed is a method for dust-proofing of a photomask in the photolithographic processing of electronic devices, e.g., LSIs and liquid-crystal display panels, in which the photomask is covered with a pellicle having a frame-supported light-transmitting membrane made from a polyvinyl alcohol modified by silylating the hydroxy groups of the polyvinyl alcohol with triorganosilyl groups of the formula R.sub.3 Si--, in which R is a monovalent hydrocarbon group, e.g., alkyl, in a degree of substitution of at least 40%. The membrane of the pellicle is highly transparent to light of short wavelength in the ultraviolet region and excellently durable under prolonged irradiation with ultraviolet light not to cause yellowing or mechanical breaking.