Abstract: A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.

Abstract: A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.

Abstract: A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.

Abstract: A high-density impurity diff-used layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diff-used layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.

Abstract: A health management device comprises at least four electrodes provided on a main body of an intelligent terminal unit; a constant current generating unit which applies a constant current to at least two electrodes among said at least four electrodes; a voltage detecting unit which detects a voltage of at least two electrodes among said at least four electrodes; a numeral input unit provided on said intelligent terminal unit; a display unit provided on said intelligent terminal unit; a switching unit which switches a function as an intelligent terminal unit into a function as a health management device and vice versa; and a control unit which calculates a health management indicator based on data input from said numeral input unit and a detected data from said voltage detecting unit and displays a calculated result on said display unit when said function being switched into the function as the health management device by said switching unit.

Abstract: A resinous cover for use in a bioelectrical impedance measuring apparatus is provided, in which the processes for manufacturing the resinous cover are significantly decreased in number and the components thereof are decreased in number and therefore the cost thereof is reduced to a low level. Further, such a resinous cover cause little the soles of feet to feel cool when the bioelectrical impedance is being measured, and the area of the electrode which comes into contact with the soles of feet is wide. A resinous cover for use in a bioelectrical impedance measuring apparatus, comprising electrodes and an insulating portion provided among the electrodes, wherein the electrodes and the insulating portion are integrally-molded.

Abstract: A resinous cover for use in a bioelectrical impedance measuring apparatus is provided, in which the processes for manufacturing the resinous cover are significantly decreased in number and the components thereof are decreased in number and therefore the cost thereof is reduced to a low level. Further, such a resinous cover cause little the soles of feet to feel cool when the bioelectrical impedance is being measured, and the area of the electrode which comes into contact with the soles of feet is wide. A resinous cover for use in a bioelectrical impedance measuring apparatus, comprising electrodes and an insulating portion provided among the electrodes, wherein said electrodes and said insulating portion are integrally-molded.

Abstract: A health management device comprises at least four electrodes provided on a main body of an intelligent terminal unit; a constant current generating unit which applies a constant current to at least two electrodes among said at least four electrodes; a voltage detecting unit which detects a voltage of at least two electrodes among said at least four electrodes; a numeral input unit provided on said intelligent terminal unit; a display unit provided on said intelligent terminal unit; a switching unit which switches a function as an intelligent terminal unit into a function as a health management device and vice versa; and a control unit which calculates a health management indicator based on data input from said numeral input unit and a detected data from said voltage detecting unit and displays a calculated result on said display unit when said function being switched into the function as the health management device by said switching unit.

Abstract: A health management device comprises at least four electrodes provided on a main body of an intelligent terminal unit; a constant current generating unit which applies a constant current to at least two electrodes among said at least four electrodes; a voltage detecting unit which detects a voltage of at least two electrodes among said at least four electrodes; a numeral input unit provided on said intelligent terminal unit; a display unit provided on said intelligent terminal unit; a switching unit which switches a function as an intelligent terminal unit into a function as a health management device and vice versa; and a control unit which calculates a health management indicator based on data input from said numeral input unit and a detected data from said voltage detecting unit and displays a calculated result on said display unit when said function being switched into the function as the health management device by said switching unit.