Patents by Inventor Ikuo Hanawa

Ikuo Hanawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor photodetection device
    Patent number: 7091527
    Abstract: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
    Type: Grant
    Filed: June 27, 2005
    Date of Patent: August 15, 2006
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Semiconductor photodetection device
    Publication number: 20050247993
    Abstract: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
    Type: Application
    Filed: June 27, 2005
    Publication date: November 10, 2005
    Applicant: Fujitsu Quantum Devices Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Semiconductor photodetection device
    Patent number: 6924541
    Abstract: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: August 2, 2005
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Photodetector having improved photoresponsitivity over a broad wavelength region
    Patent number: 6831265
    Abstract: A photodetector includes an optical absorption layer having a thickness d optimized with regard to a voltage applied across the optical absorption layer such that there occurs an increase of optical absorption coefficient at the wavelength of 1580 nm or longer.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: December 14, 2004
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Semiconductor photodetection device
    Publication number: 20040183152
    Abstract: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
    Type: Application
    Filed: December 16, 2003
    Publication date: September 23, 2004
    Applicant: Fujitsu Quantum Devices, Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Semiconductor photodetection device
    Patent number: 6693337
    Abstract: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: February 17, 2004
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Photodetector having improved photoresponsitivity over a broad wavelength region
    Publication number: 20030164444
    Abstract: A photodetector includes an optical absorption layer having a thickness d optimized with regard to a voltage applied across the optical absorption layer such that there occurs an increase of optical absorption coefficient at the wavelength of 1580 nm or longer.
    Type: Application
    Filed: November 15, 2002
    Publication date: September 4, 2003
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa
  • Semiconductor photodetection device
    Publication number: 20020113282
    Abstract: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
    Type: Application
    Filed: December 17, 2001
    Publication date: August 22, 2002
    Applicant: Fujitsu Quantum Devices Limited
    Inventors: Yoshihiro Yoneda, Ikuo Hanawa