Patents by Inventor Ikuo Hosoya

Ikuo Hosoya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5180571
    Abstract: An interrupting layer of inorganic powder other than diamond is formed on the surface of a substrate and a surface of the interrupting layer is contacted with excited raw material gases containing a carbon source, under conditions suited to depositing of diamond on the interrupting layer. The diamond which is synthesized is separated from the substrate. The use of the interrupting layer, composed of the inorganic fine powders, allows ready separation of the diamond from the substrate and the diamond separated is suitable for diaphragms for speakers, heat conductive plates, cutting tools, semiconductors, etc. by appropriately choosing shapes of the substrate. Further, the resulting diamond film can be pulverized, thereby yielding diamond powders which are useful for abrasive tools, cutting tools, etc.
    Type: Grant
    Filed: May 29, 1991
    Date of Patent: January 19, 1993
    Assignee: Idemitsu Petrochemical Company Limited
    Inventors: Ikuo Hosoya, Yasuhiro Yoneyama
  • Patent number: 4984534
    Abstract: The following are disclosed:a method for synthesis of diamond which is characterized by contacting a gas obtained by excitation of carbon monoxide and hydrogen in such a ratio as carbon monoxide being at least 1 mole % per total of carbon monoxide and hydrogen with a substrate in the presence of a reducing metal.A method for synthesis of diamond which is characterized by contacting with a substrate a gas obtained by excitation of carbon dioxide and hydrogen mixed at such a ratio of carbon dioxide being 0.1-20 mol % per hydrogen.A method for synthesis of diamond by depositing diamond on the surface of a substrate by introducing onto the surface of the substrate a plasma obtained from hydrogen and carbon source gas by irradiation of microwave in a plasma generator which is characterized in that progress of microwave oscillated from one microwave oscillator is divided and thus divided respective microwaves and led to a plurality of plasma generators.
    Type: Grant
    Filed: February 9, 1989
    Date of Patent: January 15, 1991
    Assignee: Idemitsu Petrochemical Co., Ltd.
    Inventors: Toshimichi Ito, Masaaki Nosaka, Ikuo Hosoya
  • Patent number: 4985227
    Abstract: The following are disclosed:A method for synthesis of diamond which is characterized by contacting a gas obtained by excitation of carbon monoxide and hydrogen in such a ratio as carbon monoxide being at least 1 mol % per total of carbon monoxide and hydrogen with a substrate in the presence of a reducing metal.A method for synthesis of diamond which is characterized by contacting with a substrate a gas obtained by excitation of carbon dioxide and hydrogen mixed at such a ratio of carbon dioxide being 0.1-20 mol % per hydrogen.A method for synthesis of diamond by depositiong diamond on the surface of a substrate by introducing onto the surface of the substrate a plasma obtained from hydrogen and carbon source gas by irradiation of microwave in a plasma generator which is characterized in that progress of microwave oscillated from one microwave oscillator is divided and thus divided respective microwaves and led to a plurality of plasma generators.
    Type: Grant
    Filed: April 21, 1988
    Date of Patent: January 15, 1991
    Assignee: Indemitsu Petrochemical Co., Ltd.
    Inventors: Toshimichi Ito, Masaaki Nosaka, Ikuo Hosoya