Abstract: An electrostatic chuck includes: a dielectric substrate in which a through hole is formed; an RF electrode which is embedded inside the dielectric substrate; and an attracting electrode which is embedded inside the dielectric substrate at a position that is closer to a placement surface than the RF electrode. When viewed from a direction perpendicular to the placement surface, a circular first opening which is concentric with the through hole and which includes the through hole is formed in the attracting electrode and a circular second opening which is concentric with the through hole and which includes the through hole is formed in the RF electrode. A radius of the second opening is larger than a radius of the first opening.

Abstract: An electrostatic chuck includes: a dielectric substrate on which at least one first gas hole is formed; a base plate on which at least one second gas hole is formed; and a joining layer which is provided between the dielectric substrate and the base plate and which is formed of an insulating material. A first opening being an end of the at least one first gas hole is formed on a surface of the dielectric substrate. A second opening being an end of the at least one second gas hole is formed at a position which differs from the at least one first opening on a surface of the base plate. A communication groove is formed on the surface of the base plate.

Abstract: An electrostatic chuck 10 includes: a dielectric substrate 100 which includes a surface 110 on which a substrate W is to be placed and in which through holes (gas holes 150 and lift pin holes 160) that penetrate the surface 110 are formed; an electrode terminal 121 which is provided on a surface 120 of the dielectric substrate 100 on an opposite side to the surface 110; a base plate 200 to be joined to the surface 120 of the dielectric substrate 100; and a joining layer 300 which is provided between the dielectric substrate 100 and the base plate 200 and which is formed of an insulating material. When viewed from a direction perpendicular to the surface 110, spaces 340 are formed at positions within the joining layer 300 that do not overlap with any of the through holes and the electrode terminal 121.

Abstract: An electrostatic chuck includes: a dielectric substrate on which a plurality of first gas holes are formed; a base plate on which a second gas hole is formed; and a joining layer which is provided between the dielectric substrate and the base plate and which is formed of an insulating material. A first opening being an end of each of the first gas holes is formed in plurality on a surface of the dielectric substrate on a side of the joining layer. A second opening being an end of the second gas hole is formed on a surface of the base plate on a side of the joining layer. The second opening is communicated with the plurality of first openings via a communication groove formed on the surface of the base plate on the side of the joining layer.

Abstract: An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.

Abstract: An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.

Abstract: An electrostatic chuck includes: an electrically-conductive base plate including a first part, a second part at an outer circumference of the first part, and a gas inlet path for introducing a cooling gas; a first electrostatic chuck part configured to clamp a wafer on the first part, including a ceramic dielectric substrate that includes an embedded first clamping electrode and at least one through-hole communicating with the gas inlet path; and a second electrostatic chuck part configured to clamp a focus ring on the second part, including a ceramic layer that includes at least one through-hole for introducing a cooling gas and that includes at least a first layer contacting the focus ring when the second electrostatic chuck part clamps the focus ring, in which the first layer is less dense than the ceramic dielectric substrate. Thereby, the electrostatic chuck can increase the device yield.

Abstract: According to the embodiment, the electrostatic chuck includes a ceramic dielectric substrate having a first major surface and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The ceramic dielectric substrate includes a first hole part positioned between the first major surface and the first porous part. At least one of the ceramic dielectric substrate or the first porous part includes a second hole part positioned between the first hole part and the first porous part, and a dimension of the second hole part is smaller than a dimension of the first porous part and larger than a dimension of the first hole part.

Abstract: According to the embodiment, an electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object, a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface of the ceramic dielectric substrate and being opposite to the gas introduction path. The first porous part includes a first region positioned on the ceramic dielectric substrate side. The ceramic dielectric substrate includes a first substrate region positioned on the first region side. The first region and the first substrate region are provided in contact with each other, and an average particle diameter in the first region is different from an average particle diameter in the first substrate region.

Abstract: According to the embodiment, the first invention relates to an electrostatic chuck. The electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The first porous part includes sparse portions including pores and a dense portion having a density higher than a density of the sparse portions. Each of the sparse portions extends from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the sparse portions. The sparse portions include a wall portion provided between the pores and the pores.

Abstract: According to the embodiment, the electrostatic chuck includes a ceramic dielectric substrate having a first major surface and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The ceramic dielectric substrate includes a first hole part positioned between the first major surface and the first porous part. At least one of the ceramic dielectric substrate or the first porous part includes a second hole part positioned between the first hole part and the first porous part, and a dimension of the second hole part is smaller than a dimension of the first porous part and larger than a dimension of the first hole part.

Abstract: According to the embodiment, an electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object, a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface of the ceramic dielectric substrate and being opposite to the gas introduction path. The first porous part includes a first region positioned on the ceramic dielectric substrate side. The ceramic dielectric substrate includes a first substrate region positioned on the first region side. The first region and the first substrate region are provided in contact with each other, and an average particle diameter in the first region is different from an average particle diameter in the first substrate region.

Abstract: According to the embodiment, the first invention relates to an electrostatic chuck. The electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The first porous part includes sparse portions including pores and a dense portion having a density higher than a density of the sparse portions. Each of the sparse portions extends from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the sparse portions. The sparse portions include a wall portion provided between the pores and the pores.

Abstract: An electrostatic chuck includes: a ceramic substrate; a ceramic dielectric body provided on a top side of the ceramic substrate and having a first major surface where a processing target substrate is to be mounted; and an electrode provided between the ceramic substrate and the ceramic dielectric body. A material of the ceramic dielectric body is a ceramic sintered body. A plurality of protrusions and a groove for supplying a gas are provided on the first major surface of the ceramic dielectric body. A through hole is provided in a bottom face of the groove, the through hole penetrating to a second major surface of the ceramic substrate on a side opposite to the first major surface. A distance between the electrode and the groove is greater than or equal to a distance between the electrode and the first major surface.

Abstract: An electrostatic chuck comprises a ceramic dielectric body having an electrode formed on a surface of the ceramic dielectric body; a ceramic substrate supporting the ceramic dielectric body; and a first bonding agent bonding the ceramic dielectric body to the ceramic substrate. The first bonding agent has a first major agent including an organic material, a first amorphous filler including an inorganic material, and a first spherical filler including an inorganic material. The first amorphous filler and the first spherical filler are dispersion-compounded in the first major agent. The first major agent, the first amorphous filler, and the first spherical filler are made of an electrically insulating material. An average diameter of the first spherical filler is greater than a maximum value of a minor axis of all of the first amorphous filler. A thickness of the first bonding agent is equal to or greater than the average diameter of the first spherical filler.

Abstract: An electrostatic chuck includes: a ceramic substrate; a ceramic dielectric body provided on a top side of the ceramic substrate and having a first major surface where a processing target substrate is to be mounted; and an electrode provided between the ceramic substrate and the ceramic dielectric body. A material of the ceramic dielectric body is a ceramic sintered body. A plurality of protrusions and a groove for supplying a gas are provided on the first major surface of the ceramic dielectric body. A through hole is provided in a bottom face of the groove, the through hole penetrating to a second major surface of the ceramic substrate on a side opposite to the first major surface. A distance between the electrode and the groove is greater than or equal to a distance between the electrode and the first major surface.

Abstract: An electrostatic chuck comprises: a ceramic plate provided with recesses on a major surface and provided with an electrode in an inner part of the ceramic plate; a temperature regulating plate bonded to the major surface of the ceramic plate; a first bonding agent provided between the ceramic plate and the temperature regulating plate; and a heater provided in the each of the recesses of the ceramic plate. The first bonding agent has a first major agent including an organic material, a first amorphous filler including an inorganic material, and a first spherical filler including an inorganic material. The first amorphous filler and the first spherical filler are dispersion-compounded into the first major agent. The first major agent, the first amorphous filler, and the first spherical filler are made of an electrically insulating material. An average diameter of the first spherical filler is greater than a maximum value of a minor axis of the first amorphous filler.

Abstract: The present invention provides an electrostatic chuck, which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.

Abstract: An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode, and the insulator film has a thickness of 0.6 mm or less. Alternatively, An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode selectively formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode.

Abstract: The object of the present invention is to provide an electrostatic chuck which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.