Abstract: In an X-ray CT apparatus 1 and an X-ray CT method, the thickness of an object to be inspected is computed on the basis of the number of transmitted X-rays in a specific energy range set above and below the K-absorption edge of an X-ray contrast medium serving as the object to be inspected, and a CT image is reconstructed on the basis of the computed thickness of the object to be inspected. Such X-ray CT apparatus 1 and X-ray CT method can generate an X-ray CT image stably and independently of the size of the object to be inspected and of X-ray tube voltage (X-ray energy distribution).

Abstract: In an X-ray CT apparatus 1 and an X-ray CT method, the thickness of an object to be inspected is computed on the basis of the number of transmitted X-rays in a specific energy range set above and below the K-absorption edge of an X-ray contrast medium serving as the object to be inspected, and a CT image is reconstructed on the basis of the computed thickness of the object to be inspected. Such X-ray CT apparatus 1 and X-ray CT method can generate an X-ray CT image stably and independently of the size of the object to be inspected and of X-ray tube voltage (X-ray energy distribution).

Abstract: A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 k? and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 ?s, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring ?-ray spectra over the temperature range from 2 K to 50 K.

Abstract: A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 k&OHgr; and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 &mgr;s, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring &agr;-ray spectra over the temperature range from 2 K to 50 K.