Abstract: A semiconductor chip 23 is mounted on an island section 22 in a lead frame composed of a lead having the island section 22, a ground-bonding lead section 28 and a lead 21a each continuing in sequence, and other lead terminal sections 21b to 21d, and then a grounding electrode 24a and other electrodes 24b to 24d for the semiconductor chip are respectively wire-bonded to the lead 21a and other lead terminals 21b to 21d by gold wires 25a to 25d before being embedded in a resin to form a package 27. The lead with the semiconductor chip 23 mounted thereon is structured so that the ground-bonding lead section 28 continuing to both the lead 21a and the island section 22 are absent on both the sides of the wire-bonding region 28a with respect to the island section 22 in the longitudinal section along the grounded gold wire 25a.

Abstract: In a bidirectional optical transmission device, a light-emitting element and a light-receiving element are mounted on one side of a base material and are sealed with an optically permeable resin section. The resin section includes a light emitting side resin section and a light receiving side resin section, and a slit is provided between these resin sections. The device further includes a light-blocking receptacle having a claw, and the claw of the receptacle is disposed in the slit between the light emitting side resin section and the light receiving side resin section. The claw of the receptacle prevents leakage of light from the light-emitting element between the light-emitting element and the light-receiving element.

Abstract: A semiconductor chip 23 is mounted on an island section 22 in a lead frame composed of a lead having the island section 22, a ground-bonding lead section 28 and a lead 21a each continuing in sequence, and other lead terminal sections 21b to 21d, and then a grounding electrode 24a and other electrodes 24b to 24d for the semiconductor chip are respectively wire-bonded to the lead 21a and other lead terminals 21b to 21d by gold wires 25a to 25d before being embedded in a resin to form a package 27. The lead with the semiconductor chip 23 mounted thereon is structured so that the ground-bonding lead section 28 continuing to both the lead 21a and the island section 22 are absent on both the sides of the wire-bonding region 28a with respect to the island section 22 in the longitudinal section along the grounded gold wire 25a.

Abstract: In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.

Abstract: In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Abstract: In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.

Abstract: In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.

Abstract: In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Abstract: In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Abstract: A semiconductor laser device (100) comprises a first semiconductor laser element (31) and a second semiconductor laser element (32) of different wavelengths, which are mounted on a heat sink block (2) directly or through a sub-mount provided on the heat sink block. The optical axes (A, B) of the semiconductor laser elements are substantially parallel to each other. The first and second semiconductor laser elements (31, 32) are mounted on the heat sink block (2) in such a manner that a relationship of 0≦L≦d1+d2≦160 &mgr;m is satisfied, where d1 is a distance between the optical axis (A) of the first semiconductor laser element (31) and the center axis (O) of a condenser lens (71) arranged in front of the semiconductor laser device (i.e.

Abstract: In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Abstract: In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.

Abstract: A photocoupler comprises a light-emitting element and a light-receiving element which are optically coupled through a soft light-transmissive resin and covered by a light-blocking resin. The light-emitting element is covered by a light-transmissive protective hard resin and hence is protected against external pressure.