Abstract: A solid-state imaging device including: light-receiving units which are formed in rows and columns; a transfer channel formed in each column; first and second transfer electrodes that are formed in the same layer and deposited alternately above the transfer channel; insulating regions each formed above the transfer channel and between one of the first transfer electrodes and one of the second transfer electrodes which are adjacent to each other; an antireflection film formed above the light-receiving units, and formed on the insulating regions to cover the insulating regions; a first wire formed in each row in a layer upper than the antireflection film, and electrically connected to second transfer electrodes; and a light-shielding film which is formed in a layer upper than the first wire, covers the transfer channel, and has an opening above each of the light-receiving units.

Abstract: A solid-state imaging device according to an aspect of the present invention includes: a semiconductor substrate; and a plurality of light-receiving units formed in a matrix in the semiconductor substrate and converting incident light into signal charges, and each of the convex parts is positioned corresponding to one of the light-receiving units and formed integrally with the semiconductor substrate.

Abstract: A solid state imaging device has a plurality of photodetector parts 11 arranged in matrix, a plurality of vertical charge transfer electrodes 13 that read out signal charge from the photodetector parts and transfer the signal charge in the vertical direction, and a first light-shielding film 5 that shields the plural vertical charge transfer parts from incident light. Each of the vertical charge transfer electrodes includes: a transfer channel 12 provided along the vertical array of the plural photodetector parts, a plurality of first transfer electrodes 3a that are formed on the transfer channel so as to traverse the transfer channel and that is coupled in the horizontal direction in spacing between the photodetector parts; and second transfer electrodes 3b provided on the transfer channel and arranged between the first transfer electrodes. The first light-shielding film is formed continuously in the horizontal direction and has openings formed on the photodetector parts.

Abstract: A solid-state imaging element having high sensitivity and low smear in miniaturization is provided. The solid-state imaging element includes: a photoelectric conversion unit; a read-out unit; a charge transferring unit; a charge transfer electrode formed over the charge transferring unit; shielding film formed over the charge transfer electrode and has an opening part over the photoelectric conversion unit; and anti-reflection film formed (i) in the opening part, and (ii) over the charge transfer electrode. A first edge, of the to anti-reflection film formed in the opening part, stops protruding before reaching spacing found under the shielding film. A second edge, of the anti-reflection film formed over the charge transfer electrode, stops protruding before covering a side wall of the charge transfer electrode. The first edge faces the side wall of the charge transfer electrode, and the second edge protrudes in a read-out direction of the charge.

Abstract: A solid-state imaging device including: light-receiving units which are formed in rows and columns; a transfer channel formed in each column; first and second transfer electrodes that are formed in the same layer and deposited alternately above the transfer channel; insulating regions each formed above the transfer channel and between one of the first transfer electrodes and one of the second transfer electrodes which are adjacent to each other; an antireflection film formed above the light-receiving units, and formed on the insulating regions to cover the insulating regions; a first wire formed in each row in a layer upper than the antireflection film, and electrically connected to second transfer electrodes; and a light-shielding film which is formed in a layer upper than the first wire, covers the transfer channel, and has an opening above each of the light-receiving units.

Abstract: A solid state imaging device has a plurality of photodetector parts 11 arranged in matrix, a plurality of vertical charge transfer electrodes 13 that read out signal charge from the photodetector parts and transfer the signal charge in the vertical direction, and a first light-shielding film 5 that shields the plural vertical charge transfer parts from incident light. Each of the vertical charge transfer electrodes includes: a transfer channel 12 provided along the vertical array of the plural photodetector parts, a plurality of first transfer electrodes 3a that are formed on the transfer channel so as to traverse the transfer channel and that is coupled in the horizontal direction in spacing between the photodetector parts; and second transfer electrodes 3b provided on the transfer channel and arranged between the first transfer electrodes. The first light-shielding film is formed continuously in the horizontal direction and has openings formed on the photodetector parts.

Abstract: A thermally-actuated switch mounted on an end of a motor coil of a hermetic motor-driven compressor includes a switch body including a metallic pressure-tight hermetic container, a contact mechanism disposed in the container, and an electrically conductive terminal which hermetically extends through the hermetic container and to which a lead wire is connected, and a holder including a base having a mounting face for the coil end and a holding portion located on a face of the base opposed to the mounting face for holding the switch body. The base is sized so as to prevent radiant heat from transferring from the coil end directly to the switch body. The holder has a through hole through which the terminal is inserted. The lead wire is connected to the terminal having been inserted through the hole so that the holder is held between the hermetic container and the lead wire.

Abstract: A thermally-actuated switch (1), comprising a switch body (2) having a metallic pressure-tight sealed container (4) and a contact mechanism installed in the air-tight sealed container (4) and a holder (3) having a base (3A) with an installation surface (3L) for an electric motor (10) to fit the motor to a coil end (11) and a holding part (3B) installed on the surface of the base opposite to the installation surface and holding the switch body (2), wherein the base is formed sufficiently large so that the switch body held on the holding part is not extended from the base, whereby a conductive heat and radiation heat from the coil end can be prevented from directly reaching the switch body when the thermally-actuated switch is fitted to the coil end.