Abstract: A method of magnetizing into a permanent magnet comprises placing magnetizing magnetic field applying means to be adjacent to an object to be magnetized into the permanent magnet, and continuing to apply a magnetizing magnetic field to the object by the magnetizing magnetic field applying means while cooling the object from a temperature of its Curie point or above to a temperature of below the Curie point.

Abstract: To provide a magnetizing apparatus and magnetizing method in which, even in preparation of a ring-shaped permanent magnet having a narrow magnetization pitch with multiple poles magnetized on an extremely small diameter, sufficient magnetization and high magnetization quality can be achieved and powerful magnetization can be carried out efficiently and quickly at low cost. A permanent magnet magnetizing apparatus includes a heating section 10, a magnetizing section 12 axially disposed as a discrete structure from the heating section 10, and a holding member 22 for holding magnetization object 20 and movable relative to the heating section and the magnetizing section. The magnetization object heated in the heating section is transferred to the magnetizing section and is magnetized therein.

Abstract: To provide a magnetizing apparatus and magnetizing method in which, even in preparation of a ring-shaped permanent magnet having a narrow magnetization pitch with multiple poles magnetized on an extremely small diameter, sufficient magnetization and high magnetization quality can be achieved and powerful magnetization can be carried out efficiently and quickly at low cost. A permanent magnet magnetizing apparatus includes a heating section 10, a magnetizing section 12 axially disposed as a discrete structure from the heating section 10, and a holding member 22 for holding magnetization object 20 and movable relative to the heating section and the magnetizing section. The magnetization object heated in the heating section is transferred to the magnetizing section and is magnetized therein.

Abstract: A method of magnetizing into a permanent magnet comprises placing magnetizing magnetic field applying means to be adjacent to an object to be magnetized into the permanent magnet, and continuing to apply a magnetizing magnetic field to the object by the magnetizing magnetic field applying means while cooling the object from a temperature of its Curie point or above to a temperature of below the Curie point.

Abstract: A comparing detector circuit capable of operating regardless of input voltages thereto includes a first pair of transistors to which first and second input signal voltages are input for functioning as a buffer; a second pair of transistors constructing a current mirror circuit in which an input side and an output side are connected to the first pair of transistors via first and second resistors, respectively; and an output transistor to which potential at the output side of the current mirror circuit is applied as an input.

Abstract: A semiconductor device has a power MOSFET 12 connected between a semiconductor substrate 21 of N-type as an output terminal 15 and a GND terminal 16 connected to a first semiconductor layer 22 formed on the semiconductor substrate 21 and having a gate connected to a first node for controlling the supply of electric current to a load connected between the GND terminal and the output terminal, a control circuit receiving an input signal and controlling an operation of the power MOSFET in response to the input signal, an input terminal provided in a second semiconductor layer 23 of N-type formed on the first semiconductor layer 22, a parasitic transistor 24 connected between the semiconductor substrate and the second semiconductor layer, and having a base connected to the first semiconductor layer, and switching circuit for keeping the parasitic transistor at a non-conductive state.

Abstract: Disclosed is an analog switch circuit which has: an analog switch which is composed of a P-channel first transistor and a N-channel second transistor whose drains are connected to each other and whose sources are connected to each other; first and second diodes which are in parallel and reversely to each other connected between a back gate of the first transistor and a high-potential power source; and third and fourth diodes which are in parallel and reversely to each other connected between a back gate of the second transistor and a low-potential power source.