Abstract: A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.

Abstract: A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an electron beam in the absence of an atomic halogen specie prior to proceeding with the etching process.

Abstract: A chamber having an approximately triangular transverse cross section is provided with a gas supply opening at its one side, and is provided with an exhaust opening at a vertex facing the one side. Further, the gas supply opening is provided with a showerhead-like gas supply section. Based on this configuration, the chamber is structured such that a cross-sectional area of a gas flow passage formed from the gas supply opening to the exhaust opening gradually decreases toward a direction of gas supply. At this time, a thickness of a boundary layer formed on a wall of the chamber becomes substantially constant.

Abstract: The ceiling surface (12b) of a chamber (12) is substantially entirely formed with a gas supply port (19). Further, the gas supply port (19) has shower head (20) fitted therein. The peripheral edge of the ceiling surface (12b) has connected thereto a second side wall (12d) forming an angle greater than 90 degrees with ceiling surface (12b). Further, the side surface of a susceptor (16) is formed such that it forms an angle greater than 90 degrees with a mounting surface for a wafer (W) and is substantially parallel with the second side wall (12d) of the chamber (12). Further, the susceptor (16) is disposed such that the distance (L2) between its side surface and the second side wall (12d) is greater than the distance (L1) between the shower head (20) and the wafer (W).

Abstract: A water-cooled mold for use in continuous steel casting process has at least two vertically-spaced coils arranged in the wall structure of the mold so as to surround molten steel in the mold or in a solidification shell within the mold and such that a jet of molten steel from an immersion nozzle of a tundish in the molten steel collides with the mold wall at a level between the coils. During supplying the molten steel from the tundish into the mold, the coils are supplied with DC currents of opposite directions so as to generate cusp fields in the mold, thereby suppressing the movement of the jet of the molten steel, as well as ascending and descending flows of the molten steel after collision with the mold wall.