Abstract: An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

Abstract: In one embodiment, a pattern transfer method includes forming a photoreactive resin on a substrate to be processed. The method further includes pressing a mold against the photoreactive resin, the mold including a transparent substrate having a concave-convex pattern, and a light-blocking film provided on a part of surfaces of the concave-convex pattern. The method further includes irradiating the photoreactive resin with light through the mold in a state in which the mold is pressed against the photoreactive resin. The method further includes baking the photoreactive resin in a state in which the mold is pressed against the photoreactive resin after irradiating the photoreactive resin with the light. The method further includes releasing the mold from the photoreactive resin after baking the photoreactive resin. The method further includes rinsing the photoreactive resin with a rinsing solution after releasing the mold.

Abstract: According to the present invention, there is provided a semiconductor device fabrication method comprising, bringing a mold having a predetermined pattern into contact with at least a portion of an imprinting material formed on a substrate to be processed, and forming the pattern on the substrate to be processed by sequentially transferring the pattern for each shot, wherein one of a dicing region and a monitor pattern formation region of the substrate to be processed is coated with the imprinting material.

Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

Abstract: Certain embodiments provide a method of manufacturing an organic thin film solar cell comprising forming, on a first electrode, a first transport layer having an uneven pattern and a photoelectric conversion layer provided on a surface of the uneven pattern, forming a second transport layer on a second electrode, and bringing the uneven pattern having the photoelectric conversion layer is formed thereon into contact with the second transport layer to mold the second transport layer.

Abstract: A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.

Abstract: A patterning method according to an embodiment of the present invention comprises: acquiring information about a surface state of an underlying film formed on a substrate; determining, based on the surface state, whether irregularity/foreign matter is present in each shot region in which a pattern is to be formed; and solidifying a resist agent while a first template, when it is determined that no irregularity/foreign matter is present in the shot region, or a second template that is different from the first template, when it is determined that irregularity/foreign matter is present in the shot region, is brought close to the underlying film on the shot region at a certain distance with the resist agent therebetween.

Abstract: According to a method for forming a pattern in one embodiment, a first pattern is formed on a substrate, and an upper part of the first pattern is irradiated with ultraviolet rays, to enhance a liquid-repellent property to an inversion resin material. Furthermore, according to the method for forming the pattern, the inversion resin material is applied to the substrate after the irradiation of the ultraviolet rays, the first pattern is removed after the inversion resin material has been applied to form a second pattern containing the inversion resin material, and the substrate is processed using the second pattern as a mask.

Abstract: According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.

Abstract: An imprint method includes contacting a template on a first substrate. The template includes a pattern to be transferred on the first substrate. The first substrate includes a first semiconductor substrate, and a first light curable resin coated on the first semiconductor substrate. The method further includes separating the template from the first substrate, and removing particles adhered on the template. The particle removal includes: pressing the template on an adhesive member which is distinct from the first substrate. The adhesive member includes a dummy substrate, a particle removing film formed on the dummy substrate and configured to remove the particles, and a second light curable resin coated on the particle removing film. The second light curable resin is thicker than the first light curable resin.

Abstract: According to one embodiment, a fine processing method includes determining a resist amount required for each first region of a pattern formation surface and a total amount of resist. The method include dividing the total amount of resist by a volume of one resist drop to determine the resist drops total number. The method include determining a provisional position for the resist drop of the total number. The method include assigning the each first region to nearest one resist drop, and partitioning again the pattern formation surface into second regions assigned to the each resist drop. The method include determining a divided value by dividing the volume of the one resist drop by the required total amount of resist determined. The method include finalizing a final position of the each resist drop, if a distribution of the divided value in the pattern formation surface falls within a target range.

Abstract: According to one embodiment, a droplet dispensing control method includes detecting an amount of positional deviation between a stage on which a substrate is mounted and a template as a template positional deviation amount and detecting an amount of positional deviation between a movement direction of the stage and a nozzle array direction as a nozzle positional deviation amount. The method further includes calculating a stage movement direction correction value and an ejection timing correction value of the imprint material as correction values for eliminating the positional deviation of the landing position of the imprint material. The method further includes controlling the movement direction of the stage using the stage movement direction correction value and controlling the ejection timing of the imprint material using the ejection timing correction value.

Abstract: According to one embodiment, there is provided a template which includes a first region and a second region. The first region is provided with a first pattern of a plurality of recessed portions formed on a main surface of the template, and has a first thickness. The second region is provided with a second pattern of a plurality of recessed portions formed on the main surface of the template, and has a second thickness different from the first thickness. The second pattern is different from the first pattern in at least one of interval and dimension of the recessed portions.

Abstract: An imprint system has a design data storing section which stores template information and remaining film thickness set value information, a vaporization-to-be-compensated storing section which stores a plurality of distributions of applied amounts for compensating vaporization, an arithmetic section which calculates a distribution of an applied amount for filling a pattern based upon the template information, calculates a distribution of an applied amount for forming a remaining film thickness based upon the remaining film thickness set value information, calculates a pattern density of the template from the template information, extracts a distribution of an applied amount for compensating vaporization, corresponding to this pattern density, from the vaporization-to-be-compensated storing section, and adds up this extracted distribution of an applied amount for compensating vaporization, the distribution of an applied amount for filling a pattern, and the distribution of an applied amount for forming a remai

Abstract: According to one embodiment, an imprint method is disclosed. The method can include forming a liquid droplet of a transfer material with a volume greater than a predetermined reference volume by dropping the transfer material onto a major surface of a processing substrate. The method can include reducing the volume of the liquid droplet to be less than the reference volume by volatilizing the liquid droplet. In addition, the method can include filling the transfer material into a recess provided in a transfer surface of a template by bringing the liquid droplet having the volume reduced to be less than the reference volume into contact with the transfer surface of the template.

Abstract: According to the present invention, there is provided a semiconductor device fabrication method comprising, bringing a mold having a predetermined pattern into contact with at least a portion of an imprinting material formed on a substrate to be processed, and forming the pattern on the substrate to be processed by sequentially transferring the pattern for each shot, wherein one of a dicing region and a monitor pattern formation region of the substrate to be processed is coated with the imprinting material.

Abstract: An imprint system has a design data storing section which stores template information and remaining film thickness set value information, a vaporization-to-be-compensated storing section which stores a plurality of distributions of applied amounts for compensating vaporization, an arithmetic section which calculates a distribution of an applied amount for filling a pattern based upon said template information, calculates a distribution of an applied amount for forming a remaining film thickness based upon said remaining film thickness set value information, calculates a pattern density of the template from said template information, extracts a distribution of an applied amount for compensating vaporization, corresponding to this pattern density, from said vaporization-to-be-compensated storing section, and adds up this extracted distribution of an applied amount for compensating vaporization, said distribution of an applied amount for filling a pattern, and said distribution of an applied amount for forming a

Abstract: An imprint system has a design data storing section which stores template information and remaining film thickness set value information, a vaporization-to-be-compensated storing section which stores a plurality of distributions of applied amounts for compensating vaporization, an arithmetic section which calculates a distribution of an applied amount for filling a pattern based upon the template information, calculates a distribution of an applied amount for forming a remaining film thickness based upon said remaining film thickness set value information, calculates a pattern density of the template from the template information, extracts a distribution of an applied amount for compensating vaporization, corresponding to this pattern density, from the vaporization-to-be-compensated storing section, and adds up this extracted distribution of an applied amount for compensating vaporization, the distribution of an applied amount for filling a pattern, and the distribution of an applied amount for forming a rema

Abstract: According to the present invention, there is provided a semiconductor device fabrication method comprising, bringing a mold having a predetermined pattern into contact with at least a portion of an imprinting material formed on a substrate to be processed, and forming the pattern on the substrate to be processed by sequentially transferring the pattern for each shot, wherein one of a dicing region and a monitor pattern formation region of the substrate to be processed is coated with the imprinting material.

Abstract: There is provided a template in which a gap region of a substrate to be processed can be covered with an imprint resist, a method of manufacturing the same, and a method of forming a pattern. A template used in an optical imprint method includes a substrate, a pattern forming region that is provided on the substrate and includes an imprint pattern, a first step portion that is provided outside the pattern forming region and is disposed below the pattern forming region, a first side portion that connects the pattern forming region and the first step portion, a second step portion that is provided outside the first step portion and is disposed below the first step portion, and a second side portion that connects the first step portion and the second step portion and has a surface roughness more than that of the first side portion.