Abstract: A liquid ejecting head including a first substrate in which a drive element that ejects a liquid from a nozzle, and a first wire electrically coupled to the drive element are formed, a second substrate in which an opposing surface that opposes the first substrate is adhered to the first substrate with an adhesive agent, a second wire being formed in the second substrate, and a protrusion configured to elastically deform, the protrusion being formed between the first substrate and the second substrate and electrically coupling the first wire and the second wire to each other. In the liquid ejecting head, a swelling ratio of the protrusion is larger than a swelling ratio of the adhesive agent.

Abstract: In an MEMS device, in a Z direction that is a direction in which a first core portion, a plurality of first bump wiring, and a plurality of first individual wiring are laminated, a width between the first core portion and a wiring substrate is wider than a maximum particle diameter of solid particles contained in an adhesive, and a width between a first wiring and a second wiring and a width between a third wiring and a fourth wiring are wider than the maximum particle diameter of the solid particles.

Abstract: A liquid ejecting head including a first substrate in which a drive element that ejects a liquid from a nozzle, and a first wire electrically coupled to the drive element are formed, a second substrate in which an opposing surface that opposes the first substrate is adhered to the first substrate with an adhesive agent, a second wire being formed in the second substrate, and a protrusion configured to elastically deform, the protrusion being formed between the first substrate and the second substrate and electrically coupling the first wire and the second wire to each other. In the liquid ejecting head, a swelling ratio of the protrusion is larger than a swelling ratio of the adhesive agent.

Abstract: In an MEMS device, in a Z direction that is a direction in which a first core portion, a plurality of first bump wiring, and a plurality of first individual wiring are laminated, a width between the first core portion and a wiring substrate is wider than a maximum particle diameter of solid particles contained in an adhesive, and a width between a first wiring and a second wiring and a width between a third wiring and a fourth wiring are wider than the maximum particle diameter of the solid particles.

Abstract: A conduction structure includes a device substrate (third substrate) including a conductive portion, an IC (second substrate) including an upper surface, an end surface inclined toward the upper surface, and a conductive portion (second conductive portion), a sealing plate (first substrate) including an upper surface, an end surface (first side wall portion) inclined toward the upper surface, and a conductive portion (first conductive portion), and plating layers that respectively form electrical connections between a conductive portion and a conductive portion and between a conductive portion and the conductive portion.

Abstract: A conduction structure includes a device substrate (first substrate), an IC (second substrate) having an upper surface and an end surface, a sealing plate (third substrate) having an upper surface and an end surface, a conductive layer having a first part provided on an upper surface of the device substrate, a second part provided on the end surface of the IC and connected to the first part, a third part provided on the upper surface of the IC and connected to the second part, and a fourth part provided on the end surface of the sealing plate and connected to both of the first part and the second part, and a plating layer overlapped with the conductive layer.

Abstract: A conduction structure includes a device substrate (third substrate) including a conductive portion, an IC (second substrate) including an upper surface, an end surface inclined toward the upper surface, and a conductive portion (second conductive portion), a sealing plate (first substrate) including an upper surface, an end surface (first side wall portion) inclined toward the upper surface, and a conductive portion (first conductive portion), and plating layers that respectively form electrical connections between a conductive portion and a conductive portion and between a conductive portion and the conductive portion.

Abstract: A conduction structure includes a device substrate (first substrate), an IC (second substrate) having an upper surface and an end surface, a sealing plate (third substrate) having an upper surface and an end surface, a conductive layer having a first part provided on an upper surface of the device substrate, a second part provided on the end surface of the IC and connected to the first part, a third part provided on the upper surface of the IC and connected to the second part, and a fourth part provided on the end surface of the sealing plate and connected to both of the first part and the second part, and a plating layer overlapped with the conductive layer.

Abstract: A liquid droplet ejecting head includes: a base substrate that is formed as a plate-like body and that has a concave portion, which is formed to be open toward an upper surface of the plate-like body, and a wiring pattern which is provided inside the concave portion and formed of a conductive material; and an IC package that is fixed to airtightly seal the inside of the concave portion on the upper surface side and is electrically connected to the wiring pattern.

Abstract: A liquid droplet ejecting head includes: a base substrate that has a concave portion that is formed to be open toward an upper surface and a wiring pattern; and an IC package that is electrically connected to the wiring pattern. The concave portion has a bottom portion and a pair of first side wall portions which stand obliquely on the bottom portion so as to be opposed to each other. Further, the wiring pattern has a plurality of linear objects, each of which is continuous and is constituted of a first part, a second part, and a third part. In addition, the IC package is formed in a chip shape, has a plurality of terminals which are formed on a front side surface, and is disposed such that the front side surface faces the concave portion, and each terminal is electrically connected to the first part.

Abstract: A liquid droplet ejecting head includes: a base substrate that is formed as a plate-like body and that has a concave portion, which is formed to be open toward an upper surface of the plate-like body, and a wiring pattern which is provided inside the concave portion and formed of a conductive material; and an IC package that is fixed to airtightly seal the inside of the concave portion on the upper surface side and is electrically connected to the wiring pattern.

Abstract: A liquid droplet ejecting head includes: a base substrate that has a concave portion that is formed to be open toward an upper surface and a wiring pattern; and an IC package that is electrically connected to the wiring pattern. The concave portion has a bottom portion and a pair of first side wall portions which stand obliquely on the bottom portion so as to be opposed to each other. Further, the wiring pattern has a plurality of linear objects, each of which is continuous and is constituted of a first part, a second part, and a third part. In addition, the IC package is formed in a chip shape, has a plurality of terminals which are formed on a front side surface, and is disposed such that the front side surface faces the concave portion, and each terminal is electrically connected to the first part.

Abstract: A method of manufacturing a semiconductor device having electrodes penetrating a semiconductor substrate, the method includes the steps of forming a concave portion extending from an active surface of a semiconductor substrate on which an integrated circuit is formed to an interior of the semiconductor substrate, forming a first insulating layer on an inner surface of the concave portion, filling an inner side of the first insulating layer with an electroconductive material so as to form an electrode, exposing a distal end portion of the first insulating layer by etching a rear surface of the semiconductor substrate, forming a second insulating layer on a rear surface of the substrate, and exposing the distal end portion of the electrode by removing the first insulating layer and the second insulating layer from a distal end portion of the electrode.

Abstract: A depression is formed from a first surface of a semiconductor substrate. An insulating layer is provided on the bottom surface and an inner wall surface of the depression. A conductive portion is provided inside the insulating layer. A second surface of the semiconductor substrate is etched by a first etchant having characteristics such that the etching amount with respect to the semiconductor substrate is greater than the etching amount with respect to the insulating layer, and the conductive portion is caused to project while covered by the insulating layer. At least a portion of the insulating layer formed on the bottom surface of the depression is etched with a second etchant having characteristics such that at least the insulating layer is etched without forming a residue on the conductive portion, to expose the conductive portion.

Abstract: A method for making a semiconductor device having an electrode penetrating a substrate includes (a) forming a concavity in an active face of the substrate; (b) forming an insulating layer on the active face of the substrate and the interior of the concavity; (c) removing at least part of the insulating layer formed outside the concavity; (d) forming the electrode by filling the interior of the concavity with a conductor; and (e) exposing the electrode from a rear face of the substrate opposite to the active face by milling the substrate from the rear face side. In this method, (a) to (e) are performed in that order.

Abstract: A through hole tapered from an opening to the in-depth direction is formed in a semiconductor substrate provided with an integrated circuit. An insulating material is supplied to the through hole through the opening so as to form an insulating layer on the inner surface of the through hole. A conductive material is supplied through the opening to the through hole provided with the insulating layer so as to form a conductive portion inside the insulating layer.

Abstract: A depression is formed from a first surface of a semiconductor substrate on which is formed an integrated circuit. An insulating layer is provided on the inner surface of the depression. A first conductive portion is provided on the inside of the insulating layer. A second conductive portion is formed on the inside of the insulating layer and over the first conductive portion, of a different material from the first conductive portion. The first conductive portion is exposed from a second surface of the semiconductor substrate opposite to the first surface.

Abstract: A semiconductor device includes a semiconductor substrate with a through hole formed therein, a first insulating film formed inside the through hole, and an electrode formed on an inner side of the first insulating film inside the through hole. The first insulating film at the rear surface side of the semiconductor substrate protrudes beyond the rear surface, and the electrode protrudes on both the active surface side and the rear surface side of the semiconductor substrate. An outer diameter of a protruding portion on the active surface side is larger than an outer diameter of the first insulating film inside the through hole, and a protruding portion on the rear surface side protrudes further beyond the first insulating film to have a side surface thereof exposed. The semiconductor device has improved connectivity and connection strength and, in particular, has excellent resistance to shearing force when used in three-dimensional packaging technology.

Abstract: A method of manufacturing a semiconductor device having electrodes penetrating a semiconductor substrate, the method includes the steps of forming a concave portion extending from an active surface of a semiconductor substrate on which an integrated circuit is formed to an interior of the semiconductor substrate, forming a first insulating layer on an inner surface of the concave portion, filling an inner side of the first insulating layer with an electroconductive material so as to form an electrode, exposing a distal end portion of the first insulating layer by etching a rear surface of the semiconductor substrate, forming a second insulating layer on a rear surface of the substrate, and exposing the distal end portion of the electrode by removing the first insulating layer and the second insulating layer from a distal end portion of the electrode.

Abstract: A depression is formed from a first surface of a semiconductor substrate on which is formed an integrated circuit. An insulating layer is provided on the inner surface of the depression. A first conductive portion is provided on the inside of the insulating layer. A second conductive portion is formed on the inside of the insulating layer and over the first conductive portion, of a different material from the first conductive portion. The first conductive portion is exposed from a second surface of the semiconductor substrate opposite to the first surface.