Abstract: A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a hard mask layer containing hydrogen atoms on the hydrogen diffusion preventing layer; forming storage node contact holes, which pass through the hydrogen diffusion preventing layer and the interlayer dielectric layer and expose impurity regions of the transistors, by etching the hydrogen diffusion preventing layer and the interlayer dielectric layer using the hard mask layer as an etching barrier layer; and forming the storage node contacts by filling the storage node contact holes with a conductive layer.

Abstract: A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a hard mask layer containing hydrogen atoms on the hydrogen diffusion preventing layer; forming storage node contact holes, which pass through the hydrogen diffusion preventing layer and the interlayer dielectric layer and expose impurity regions of the transistors, by etching the hydrogen diffusion preventing layer and the interlayer dielectric layer using the hard mask layer as an etching barrier layer; and forming the storage node contacts by filling the storage node contact holes with a conductive layer.