Abstract: Disclosed is a technique for switching from a master node to a secondary node in a communication system. A method of a first communication node may comprise: adding the first communication node as a primary secondary cell (PSCell) to a second communication node through dual connectivity (DC); generating a first user plane path for smart dynamic switching (SDS) and a first instance for supporting the first user plane path according to a request from the second communication node; transmitting information on the first user plane path and the first instance to a terminal; receiving user data based on the first user plane path from the terminal as the first instance; and transmitting the user data to a core network using the first user plane path.

Abstract: A method of a first terminal may include: identifying first RB set(s) to be used for SL communication among consecutive RB sets through an LBT procedure; identifying a first subchannel group included in the first RB set(s) and a second subchannel group including a first PRB in the first RB set(s), the first PRB being not included in the first subchannel group; configuring the first PRB within the second subchannel group as an SL communication resource; and transmitting, to a second terminal, control information indicating that the first PRB is configured as the SL communication resource.

Abstract: A wireless communication method and apparatus in a wireless local area network (WLAN) system are disclosed. A wireless communication method according to one embodiment may include generating a high-efficiency Wi-Fi (HEW) frame including at least one of an HEW-SIG-A field and an HEW-SIG-B field which include channel information for communications according to an Orthogonal Frequency-Division Multiple Access (OFDMA) mode, and transmitting the generated HEW frame to a reception apparatus.

Abstract: A virtual golf course generation system of the present embodiment includes: a field template generation unit for generating a field template including information on a terrain and an altitude of a specific location and information on an object, by using a result classified or extracted from different map data so as to generate a virtual golf course; a 3D green terrain generation unit for generating a 3D green terrain by using a three-dimensional mesh generated using terrains and altitudes of a green and a green bunker of the actual golf course to be displayed on the virtual golf course; and a matching unit for matching the generated 3D green terrain with the field template to generate the virtual golf course.

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

Abstract: A data communication method is capable of preventing an endless repetition of a resource reservation procedure due to the change of a link state in a communication network using a resource reservation protocol. The method includes the steps of starting a timer set for a predetermined time period when a link resource for data transmission from a sender to a receiver is reserved in the communication network, determining whether the timer is in operation when the link state of the communication network is changed after the resource is reserved, ignoring the change of the link state and continuing the data transmission when the timer is determined to be in operation, and again reserving the link resource for the data transmission when the timer is determined to be not in operation.