Abstract: Provided is a method for cleaning a substrate processing apparatus. The method includes loading a substrate into a chamber, injecting a gas containing at least one of Zn, Ga, In, or Sn into the chamber to deposit a thin film on the substrate, unloading the substrate to the outside of the chamber, injecting a cleaning gas containing Br into the chamber, and exhausting byproducts generated through a reaction between impurities deposited inside the chamber in addition to the substrate and the cleaning gas in the depositing of the thin film. Therefore, the inside of the apparatus may be cleaned at relatively low temperature. That is, impurities having the form of the thin film, which are deposited on a surface of a component or structure installed inside the apparatus may be delaminated from the surface.

Abstract: Disclosed are a raw material supply method including vaporizing a raw material in a canister, discharging the vaporized raw material, measuring an inner temperature of the canister, calculating a calculated temperature by using the inner temperature, and compensating a variation of the inner temperature by heating a heating unit disposed on the canister at the calculated temperature and a raw material supply apparatus applied to the method for supplying the raw material. The raw material supply method and apparatus may stably supply the vaporized raw material to a process space.

Abstract: Provided is a method for depositing a thin film, which is performed to deposit a thin film on a substrate. A method for depositing a thin film includes supplying a source gas together with a first diffusion gas onto a substrate provided in a process space, and supplying a reactant gas together with a second diffusion gas onto the substrate to continuous with the supplying of the source gas. The first diffusion gas and source gas and the second diffusion gas and reactant gas are supplied onto the substrate through paths different from each other.

Abstract: Disclosed are an apparatus, system, and method for manufacturing a touch panel, which form a bridge with transparent first oxide having conductivity and forms second oxide, which is robust to a high temperature and high humidity, on the bridge. The method includes forming a plurality of electrode parts in a display area of a substrate, forming a light blocking layer in a non-display area of the substrate, forming an electrode line on the light blocking layer, forming a line bridge by using transparent first oxide having conductivity, and forming second oxide on the first oxide for protecting the first oxide.