Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.

Abstract: A substrate support unit according to an example embodiment of the present inventive concept may include a support having an upper surface on which a substrate is disposed; a coupling ring on which an edge of the substrate is disposed, the coupling ring being having an annular shape, wherein the coupling ring is disposed on an edge of the support; and an arm part for raising and lowering the coupling ring and the substrate, wherein the arm part is disposed below the coupling ring and under a portion of the coupling ring, wherein the coupling ring has a first region disposed on the arm part and a second region disposed around the first region, wherein the first region has a thickness greater than that of the second region.

Abstract: A substrate support unit according to an example embodiment of the present inventive concept may include a support having an upper surface on which a substrate is disposed; a coupling ring on which an edge of the substrate is disposed, the coupling ring being having an annular shape, wherein the coupling ring is disposed on an edge of the support; and an arm part for raising and lowering the coupling ring and the substrate, wherein the arm part is disposed below the coupling ring and under a portion of the coupling ring, wherein the coupling ring has a first region disposed on the arm part and a second region disposed around the first region, wherein the first region has a thickness greater than that of the second region.