Abstract: According to an embodiment, in a solution provision method and system: a target solution for a target factory is determined in a platform in which solutions for a smart factory, the solutions including at least one template, are registered; at least one target template corresponding to the target solution is revised according to an environment of the target factory; and the target solution, to which the revised target template is applied, is applied to the target factory.

Abstract: According to an embodiment, in a solution provision method and system: a target solution for a target factory is determined in a platform in which solutions for a smart factory, the solutions including at least one template, are registered; at least one target template corresponding to the target solution is revised according to an environment of the target factory; and the target solution, to which the revised target template is applied, is applied to the target factory.

Abstract: Pre-purchase and post-purchase item information provision methods and systems using an RFID technology and computer readable storage media storing programs for executing the methods are provided.

Abstract: Pre-purchase and post-purchase item information provision methods and systems using an RFID technology and computer readable storage media storing programs for executing the methods are provided.

Abstract: Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

Abstract: Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

Abstract: Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

Abstract: Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

Abstract: Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

Abstract: FS-isolated fields (10a, 10b). LOCOS-isolated fields (11c, 11d). FS-isolated fields (10e, 10f), LOCOS-isolated field (11g, 11h) and FS-isolated field (10i) are arranged in this order. Thus, a master layout can he provided, where SOI transistors having bodies to be supplied with fixed potential and those having bodies not to be supplied with fixed potential are mixed.

Abstract: FS-isolated fields (10a, 10b), LOCOS-isolated fields (11c, 11d), FS-isolated fields (10e, 10f), LOCOS-isolated field (11g, 11h) and FS-isolated field (10i) are arranged in this order. Thus, a master layout can be provided, where SOI transistors having bodies to be supplied with fixed potential and those having bodies not to be supplied with fixed potential are mixed.