Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a shaped platform with a conductive post; mounting the shaped platform with the conductive post over a temporary carrier; mounting an integrated circuit device over the temporary carrier; encapsulating the conductive post and the integrated circuit device; removing a portion of the shaped platform isolating the conductive post; and removing the temporary carrier.

Abstract: A semiconductor device has a carrier for supporting the semiconductor device. A first semiconductor die is mounted over the carrier. A first dummy die having a first through-silicon via (TSV) is mounted over the carrier. The first semiconductor die and the first dummy die are encapsulated using a wafer molding material. The carrier is removed. A first redistribution layer (RDL) is formed over a first surface of the first semiconductor die and a first surface of the first dummy die to electrically connect the first TSV and a contact pad of the first semiconductor die. An insulation layer is formed over the first RDL. A second RDL is formed over a second surface of the first dummy die opposite the first surface of the first dummy die and electrically connected to the first TSV. A semiconductor package is connected to the second RDL.

Abstract: A method for fabricating an encapsulant cavity integrated circuit package system includes: forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and an interposer, and attaching a component on the interposer in the encapsulant cavity.

Abstract: A method for forming a heat spreader, and the heat spreader formed thereby, are disclosed. An array heat spreader having a plurality of connected heat spreader panels is formed. Slots are formed in opposing sides of the heat spreader panels. Legs are formed on and extending downwardly from each of the heat spreader panels in at least an opposing pair of the slots on the heat spreader panels. The legs are integral with the respective heat spreader panels from which they depend.

Abstract: A method of manufacture of an integrated circuit packaging system is provided including: forming a D-ring includes half etching a paddle, etching a ring, and etching a tie bar. The tie bar is between the paddle and the ring. The system further includes mounting an integrated circuit die on a central portion of the D-ring, connecting the integrated circuit die and the D-ring, and encapsulating the integrated circuit die and a portion of the D-ring.

Abstract: An encapsulant cavity integrated circuit package system including forming a first integrated circuit package with an inverted bottom terminal having an encapsulant cavity and an interposer, and attaching a component on the interposer in the encapsulant cavity.

Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each having a lead frame interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the lead frame interconnect structure and encapsulant. The package interconnect structure and lead frame interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the lead frame interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the lead frame interconnect structure.

Abstract: A semiconductor device is fabricated by providing a carrier for supporting the semiconductor device. A first semiconductor die is mounted to the carrier. The first semiconductor die has a contact pad. A first dummy die is mounted to the carrier. The first dummy die has a through-silicon via (TSV). The first semiconductor die and the first dummy die are encapsulated using a wafer molding material. A first interconnect structure is formed over the first semiconductor die and the first dummy die. The first interconnect structure is connected to the contact pad of the first semiconductor die and the TSV of the first dummy die. The carrier is removed and a second interconnect structure is formed over the first semiconductor die and the first dummy die. The second interconnect structure is connected to the TSV of the first dummy die. A semiconductor package is connected to the second interconnect structure.

Abstract: A method of manufacture of an integrated circuit packaging system includes: fabricating a base package substrate having a component side and a system side; coupling stacking interconnects on the component side; and forming an integrated circuit receptacle, for receiving an integrated circuit device, by molding a reinforced encapsulant on the component side and exposing a portion of the stacking interconnects.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching an interconnect to the substrate; encapsulating the interconnect with an encapsulation leaving a portion of the interconnect not encapsulated; attaching a joint to the interconnect and simultaneously creating a coined-surface of the interconnect contacting the joint; and attaching an integrated circuit to the substrate.

Abstract: A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a component side and a system side; depositing a solder resist layer on the component side of the package substrate; patterning groups of access openings and a die mount opening in the solder resist layer; attaching an integrated circuit die in the die mount opening; forming conductive contacts in the access openings; and attaching system interconnects to the system side of the package substrate including controlling a coplanarity of the system interconnects by the solder resist layer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching a device to the substrate; providing interconnects on the substrate; and forming a flexible tape substantially conformal to the device and contacting the interconnects.

Abstract: An integrated circuit die is provided having a body portion having a singulation side and a pedestal portion extending from the body portion and having a singulation side coplanar with the singulation side of the body portion.

Abstract: A semiconductor device is made by first forming a protective layer over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

Abstract: An offset integrated circuit package-on-package stacking system is provided including providing a base substrate, providing an array of contact pads on the base substrate, mounting an active component and an optional passive component on the base substrate, injecting a mold cap on the base substrate, mounting an offset package on the base substrate and the mold cap, and singulating a package-on-package from the base substrate.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a substrate including: patterning a bonding pad on the substrate, patterning a first signal trace coupled to the bonding pad, patterning a second signal trace on the substrate, and connecting a pedestal on the second signal trace; mounting an integrated circuit on the substrate; and coupling an electrical interconnect between the integrated circuit, the bonding pad, the pedestal, or a combination thereof.

Abstract: A semiconductor package is made using a prefabricated post carrier including a base plate and plurality of conductive posts. A film encapsulant is disposed over the base plate of the post carrier and around the conductive posts. A semiconductor die is mounted to a temporary carrier. The post carrier and temporary carrier are pressed together to embed the semiconductor die in the film encapsulant. The semiconductor die is disposed between the conductive posts in the film encapsulant. The temporary carrier and base plate of the post carrier are removed. A first circuit build-up layer is formed over a first side of the film encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. A second circuit build-up layer is formed over a second side of the film encapsulant opposite the first side. The second circuit build-up layer is electrically connected to the conductive posts.

Abstract: A semiconductor package includes a post carrier having a base plate and plurality of conductive posts. A photosensitive encapsulant is deposited over the base plate of the post carrier and around the conductive posts. The photosensitive encapsulant is etched to expose a portion of the base plate of the post carrier. A semiconductor die is mounted to the base plate of the post carrier within the etched portions of the photosensitive encapsulant. A second encapsulant is deposited over the semiconductor die. A first circuit build-up layer is formed over the second encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. The base plate of the post carrier is removed and a second circuit build-up layer is formed over the semiconductor die and the photosensitive encapsulant opposite the first circuit build-up layer. The second circuit build-up layer is electrically connected to the conductive posts.

Abstract: An integrated circuit package system including a plurality of substrates and a plurality of semiconductor devices formed on each of the substrates. An edge connection system is provided and an electrical edge connector on each of the substrates is for attachment to the edge connection system. A vertically stacked configuration of the substrates is formed by attaching the substrates to the edge connection system.