Patents by Inventor Il-kyoung Kim
Il-kyoung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8361274Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.Type: GrantFiled: January 10, 2005Date of Patent: January 29, 2013Assignees: Samsung Electronics Co., Ltd, Ulvac, Inc.Inventors: Kwang-Myung Lee, Ki-Young Yun, Il-Kyoung Kim, Sung-Wook Park, Seung-Ki Chae, No-Hyun Huh, Jae-Wook Kim, Jae-Hyuck An, Woo-Seok Kim, Myeong-Jin Kim, Kyoung-Ho Jang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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Patent number: 7560712Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.Type: GrantFiled: August 27, 2007Date of Patent: July 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Il-Kyoung Kim, No-Hyun Huh, Tae-Won Lee, Sung-Wook Park, Ki-Young Yun, Won-Soon Lee, Young-Ha Yoon, Tae-Sub Im
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Publication number: 20080054194Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.Type: ApplicationFiled: August 27, 2007Publication date: March 6, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Il-Kyoung KIM, No-Hyun HUH, Tae-Won LEE, Sung-Wook PARK, Ki-Young YUN, Won-Soon LEE, Young-Ha YOON, Tae-Sub IM
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Publication number: 20070181062Abstract: A semiconductor device manufacturing apparatus comprises a chamber for processing a wafer, a wafer loading unit configured to load a wafer into and out of the chamber, a heating unit coupled with a chamber wall and a temperature measuring unit located between the chamber wall and the wafer loading unit and apart from the chamber wall.Type: ApplicationFiled: February 2, 2007Publication date: August 9, 2007Inventors: Il-Kyoung Kim, Kwang-Myung Lee, No-Hyun Huh, Wan-Goo Hwang, Ki-Young Yun
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Publication number: 20070051387Abstract: A method of cleaning a plasma generating area of a plasma applicator in situ is disclosed and comprises; supplying a by-product cleaning gas to the plasma generating area, and generating a plasma from the by-product cleaning gas in the plasma generating area.Type: ApplicationFiled: August 28, 2006Publication date: March 8, 2007Inventors: Wan-goo Hwang, No-hyun Huh, Il-kyoung Kim, Jeong-soo Suh, Ki-young Yun
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Publication number: 20060169201Abstract: In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is coupled with the atomizer and controlled by a valve controller of the liquid mass flow controller. The on-off valve is opened to form the layer and closed during downtime of a layer formation apparatus to prevent leakage of the remaining liquid reactant in a connecting conduit between the liquid mass flow controller and the on-off valve.Type: ApplicationFiled: February 1, 2006Publication date: August 3, 2006Inventors: Wan-Goo Hwang, Seung-Ki Chae, Myeong-Jin Kim, Seoung-Chang Baek, Sung-Wook Park, Un-Chan Baek, Hyun-Wook Lee, Kyoung-Ho Jang, Seong-Ju Choi, Il-Kyoung Kim
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Publication number: 20050150861Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.Type: ApplicationFiled: January 10, 2005Publication date: July 14, 2005Inventors: Kwang-Myung Lee, Ki-Young Yun, Il-Kyoung Kim, Sung-Wook Park, Seung-Ki Chae, No-Hyun Huh, Jae-Wook Kim, Jae-Hyuck An, Woo-Seok Kim, Myeong-Jin Kim, Kyoung-Ho Jang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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Patent number: 6348116Abstract: A dustproof fabric for use in manufacturing a smock to be worn in a clean room of a semiconductor fabrication facility includes an inner layer of a knitted fabric, an intermediate layer attached to the inner layer and formed of a non-micro porous polyurethane resin film possessing a high degree of moisture absorbency, and an outer layer attached to the intermediate layer and formed of a high density polyester woven fabric containing conductive yarn in the warp and weft.Type: GrantFiled: December 21, 1999Date of Patent: February 19, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-su Lim, Hyeog-ki Kim, Sue-ryeon Kim, Il-kyoung Kim
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Patent number: 6040254Abstract: A dust-proof fabric is disclosed. The fabric comprises an inner knit fabric layer, an intermediate layer of a moisture absorbent polyurethane film and a high density woven polyester fabric outer layer. The outer layer contains a first set of spaced apart conductive yarns aligned with one another in the warp direction and a second set of spaced apart conductive yarns aligned in the weft direction.Type: GrantFiled: October 8, 1998Date of Patent: March 21, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-su Lim, Hyeog-ki Kim, Sue-ryeon Kim, Il-kyoung Kim
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Patent number: D717165Type: GrantFiled: November 15, 2013Date of Patent: November 11, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-Hee Kwak, Il-Kyoung Kim, Eun Ae Shally Lee, Da-Hee Heo
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Patent number: D717166Type: GrantFiled: November 15, 2013Date of Patent: November 11, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Ae Shally Lee, Ji-Hee Kwak, Il-Kyoung Kim, Da-Hee Heo
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Patent number: D726532Type: GrantFiled: November 14, 2013Date of Patent: April 14, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Ae Shally Lee, Ji-Hee Kwak, Il-Kyoung Kim, Da-Hee Heo
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Patent number: D727153Type: GrantFiled: November 14, 2013Date of Patent: April 21, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-Hee Kwak, Il-Kyoung Kim, Eun Ae Shally Lee, Da-Hee Heo
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Patent number: D727154Type: GrantFiled: November 14, 2013Date of Patent: April 21, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Ae Shally Lee, Ji-Hee Kwak, Il-Kyoung Kim, Da-Hee Heo
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Patent number: D727733Type: GrantFiled: November 14, 2013Date of Patent: April 28, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-Hee Kwak, Il-Kyoung Kim, Eun Ae Shally Lee, Da-Hee Heo
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Patent number: D727734Type: GrantFiled: November 14, 2013Date of Patent: April 28, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-Hee Kwak, Il-Kyoung Kim, Eun Ae Shally Lee, Da-Hee Heo
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Patent number: D734147Type: GrantFiled: November 14, 2013Date of Patent: July 14, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Ji-Hee Kwak, Il-Kyoung Kim, Eun Ae Shally Lee, Da-Hee Heo
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Patent number: D747647Type: GrantFiled: November 14, 2013Date of Patent: January 19, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Ae Shally Lee, Ji-Hee Kwak, Il-Kyoung Kim, Da-Hee Heo
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Patent number: D770890Type: GrantFiled: June 26, 2015Date of Patent: November 8, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: DaHee Heo, Joon Taek Lee, Il Kyoung Kim