Abstract: Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.

Abstract: A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.

Abstract: A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.

Abstract: Provided is a waveguide including an input end configured to receive an input wave from an outside; a filtering portion configured to change a frequency range of the input wave; an output end configured to output an output wave of which a frequency range is changed from the frequency range of the input wave; and an inner wall controller configured to control a size of an inner wall of the filtering portion such that the frequency range of the input wave changes to the frequency range of the output wave.

Abstract: An image acquisition apparatus including a beam source, a beam expander, a beam splitter, an interferometer reference arm, a sample, a beam diffuser, a telecentric f-? lens, a beam scanner, and a beam detector uses a terahertz wave to acquire a surface image and a depth image of the sample.

Abstract: Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.

Abstract: An image acquisition apparatus including a beam source, a beam expander, a beam splitter, an interferometer, a sample, a beam diffuser, a telecentric f-? lens, a beam scanner, and a beam detector uses a terahertz wave to acquire a surface image and a depth image of the sample.

Abstract: Disclosed is a terahertz, reflection imaging system using a rotating polyhedral mirror and a telecentric f-theta lens. The terahertz reflection imaging system may include a light source configured to output a terahertz, beam, a rotating polyhedral mirror of which a mirror is combined with each of polyhedral faces, and configured to reflect the terahertz beam transmitted from the light source in a direction in which a specimen is disposed, a telecentric f-theta lens configured to transmit the terahertz beam reflected from the rotating polyhedral mirror to the specimen and correct a chief ray of the terahertz beam reflected from the rotating polyhedral mirror to be parallel to an optical axis of the telecentric f-theta lens, and a detector configured to detect a terahertz beam reflected from the specimen.

Abstract: The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an exemplary embodiment comprises a photoconductive substrate; and a plurality of terahertz wave generating unit elements arranged in a two-dimensional array on the photoconductive substrate. Also, the terahertz wave generating unit elements comprise a plurality of first electrodes arranged in the two-dimensional array on the photoconductive substrate and respectively connected to a plurality of first electrode pads, and at least one second electrode formed on the photoconductive substrate so as to face the first electrodes.

Abstract: An apparatus providing a terahertz (THz) wave may comprise at least one THz wave generator each of which generates a THz wave; at least one first phase adjuster adjusting a phase of the generated THz wave; at least one waveguide part receiving and combining the at least one phase-adjusted THz wave radiated from the at least one first phase adjuster, and guiding the combined THz wave; at least one second phase adjuster adjusting a phase of the combined THz wave from the at least one waveguide part, which is connected to the at least one waveguide part or disposed in a portion of the at least one waveguide part; and an output module outputting the THz wave guided from the at least one waveguide part.

Abstract: An apparatus providing a terahertz (THz) wave may comprise at least one THz wave generator each of which generates a THz wave; at least one first phase adjuster adjusting a phase of the generated THz wave; at least one waveguide part receiving and combining the at least one phase-adjusted THz wave radiated from the at least one first phase adjuster, and guiding the combined THz wave; at least one second phase adjuster adjusting a phase of the combined THz wave from the at least one waveguide part, which is connected to the at least one waveguide part or disposed in a portion of the at least one waveguide part; and an output module outputting the THz wave guided from the at least one waveguide part.

Abstract: The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an exemplary embodiment comprises a photoconductive substrate; and a plurality of terahertz wave generating unit elements arranged in a two-dimensional array on the photoconductive substrate. Also, the terahertz wave generating unit elements comprise a plurality of first electrodes arranged in the two-dimensional array on the photoconductive substrate and respectively connected to a plurality of first electrode pads, and at least one second electrode formed on the photoconductive substrate so as to face the first electrodes.

Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.

Abstract: Disclosed is a photomixer for generating and detecting a terahertz continuous wave, including: an optical conductor to which beating light is incident; and a plurality of antenna feeding electrodes formed on both side surfaces of the optical conductor, and configured to receive a current of a terahertz frequency.