Patents by Inventor IL-Suk Han

IL-Suk Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with stacked memory and logic substrates and method for fabricating the same
    Patent number: 6746911
    Abstract: Disclosed are a semiconductor device and a method for fabricating the same and, more particularly, a method for decreasing the size of semiconductor devices by stacking two substrates, one of which has only memory cells and the other of which has only logic circuits is disclosed. The disclosed method includes forming memory cells on a first semiconductor substrate; forming logic circuits on a second semiconductor substrate; and stacking the second semiconductor substrate on the first semiconductor substrate in order that the memory cells are electrically operable to the logic circuits on the second semiconductor substrate. In the disclosed stacked semiconductor substrate, the logic circuit area is placed on the memory cell area and these two areas are electrically connected by a metal interconnection, thereby decreasing the size of the semiconductor devices.
    Type: Grant
    Filed: May 22, 2003
    Date of Patent: June 8, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Il-Suk Han
  • Semiconductor device with stacked memory and logic substrates and method for fabricating the same
    Publication number: 20030197268
    Abstract: Disclosed are a semiconductor device and a method for fabricating the same and, more particularly, a method for decreasing the size of semiconductor devices by stacking two substrates, one of which has only memory cells and the other of which has only logic circuits is disclosed. The disclosed method includes forming memory cells on a first semiconductor substrate; forming logic circuits on a second semiconductor substrate; and stacking the second semiconductor substrate on the first semiconductor substrate in order that the memory cells are electrically operable to the logic circuits on the second semiconductor substrate. In the disclosed stacked semiconductor substrate, the logic circuit area is placed on the memory cell area and these two areas are electrically connected by a metal interconnection, thereby decreasing the size of the semiconductor devices.
    Type: Application
    Filed: May 22, 2003
    Publication date: October 23, 2003
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventor: Il-Suk Han
  • Semiconductor device with stacked memory and logic substrates and method for fabricating the same
    Patent number: 6593184
    Abstract: Disclosed are a semiconductor device and a method for fabricating the same and, more particularly, a method for decreasing the size of semiconductor devices by stacking two substrates, one of which has only memory cells and the other of which has only logic circuits is disclosed. The disclosed method includes forming memory cells on a first semiconductor substrate; forming logic circuits on a second semiconductor substrate; and stacking the second semiconductor substrate on the first semiconductor substrate in order that the memory cells are electrically operable to the logic circuits on the second semiconductor substrate. In the disclosed stacked semiconductor substrate, the logic circuit area is placed on the memory cell area and these two areas are electrically connected by a metal interconnection, thereby decreasing the size of the semiconductor devices.
    Type: Grant
    Filed: July 27, 2001
    Date of Patent: July 15, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: IL-Suk Han
  • Semiconductor device with stacked memory and logic substrates and method for fabricating the same
    Publication number: 20020050634
    Abstract: Disclosed are a semiconductor device and a method for fabricating the same and, more particularly, a method for decreasing the size of semiconductor devices by stacking two substrates, one of which has only memory cells and the other of which has only logic circuits is disclosed. The disclosed method includes forming memory cells on a first semiconductor substrate; forming logic circuits on a second semiconductor substrate; and stacking the second semiconductor substrate on the first semiconductor substrate in order that the memory cells are electrically operable to the logic circuits on the second semiconductor substrate. In the disclosed stacked semiconductor substrate, the logic circuit area is placed on the memory cell area and these two areas are electrically connected by a metal interconnection, thereby decreasing the size of the semiconductor devices.
    Type: Application
    Filed: July 27, 2001
    Publication date: May 2, 2002
    Inventor: Il-Suk Han