Patents by Inventor Ilan A. Blech

Ilan A. Blech has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5248889
    Abstract: An apparatus and a method for measuring the radius of curvature of a surface using a laser beam with a wavelength selectable from a plurality wavelengths are disclosed. The present invention avoids poor measurement due to destructive interference of the beams reflected at a thin film's upper and lower surfaces. The present invention is applicable to laser reflection stress measurement apparatuses of both scanning and beam-splitting types.
    Type: Grant
    Filed: February 13, 1991
    Date of Patent: September 28, 1993
    Assignee: Tencor Instruments, Inc.
    Inventors: Ilan A. Blech, Dov E. Hirsch
  • Patent number: 5134303
    Abstract: In accordance with the present invention, an apparatus and a method for measuring the radius of curvature of a surface using laser beams of multiple wavelengths are provided. The present invention avoids poor measurement due to destructive interference of the beams reflected at a thin film's upper and lower surfaces. The present invention is applicable to laser reflection stress measurement apparatuses of both scanning and beam-splitting types.
    Type: Grant
    Filed: August 14, 1990
    Date of Patent: July 28, 1992
    Assignee: Flexus, Inc.
    Inventors: Ilan A. Blech, Dov E. Hirsch
  • Patent number: 5070383
    Abstract: A memory matrix comprises a plurality of word lines, a plurality of bit lines, and a stacked diode and voltage-variable resistor structure interconnecting bit lines to word lines. The stacked diode and voltage-variable resistor structure includes a doped region in a semiconductor substrate defining a work line, a doped polycrystalline silicon layer over said word line and forming a p-n junction therewith, and an amorphized region in the doped polycrystalline silicon layer having increased resistance over the non-amorphized portion of the doped polycrystalline silicon layer. A contact is made to the amorphized polycrystalline silicon material which preferably includes a titanium-tungsten barrier layer and an aluminum layer over the barrier layer.
    Type: Grant
    Filed: January 10, 1989
    Date of Patent: December 3, 1991
    Assignee: Zoran Corporation
    Inventors: Alexander B. Sinar, Levy Gerzberg, Yosef Y. Shacham, Ilan A. Blech, Eric R. Sirkin
  • Patent number: 4882611
    Abstract: A voltage-programmable device in which the programming voltage V.sub.p and the "off" resistance R.sub.i are separately controlled. The device includes a body of semiconductor material having a doped region therein, and an amorphized layer in the doped region and abutting a surface, and a surface layer in the amorphized layer with the surface layer having a resistivity higher than the resistivity of the amorphized layer prior ot programming of the device. The surface layer has a miniscule thickness (on the order of 50-150 Angstroms) and does not affect the programming of the device. Moreover, the final resistance of the programmed device is not significantly affected by the presence of the first layer. The amorphized layer is formed by ion implantation, and the or by oxygen plasma treatment.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: November 21, 1989
    Assignee: Zoran Corporation
    Inventors: Ilan A. Blech, Levy Gerzberg, Yosef Y. Shacham, Alexander Sinar, Eric R. Sirkin
  • Patent number: 4845045
    Abstract: An electrically programmable element is fabricated in a P-N junction isolated region of a semiconductor body by first extending the depth of the region in the body by introducing dopants through the region into the body by ion implantation or by diffusion and drive-in, and thereafter forming an amorphotized layer in the first region overlying the extended portion. The increased depth of the first region provided by the second region prevents damage to the P-N junction between the semiconductor body and the first region during formation of the amorphotized layer.
    Type: Grant
    Filed: September 15, 1988
    Date of Patent: July 4, 1989
    Assignee: Zoran Corporation
    Inventors: Yosef Y. Shacham, Alexander B. Sinar, Eric R. Sirkin, Ilan A. Blech