Abstract: Methods for analyzing and altering the operation of a semiconductor device are provided. The methods include exposing an area of a semiconductor device through a selective partial etch process that creates a skeleton-like structure of metal traces. The exposed areas impose minimal invasiveness to the functionality of the device. The exposed area can facilitate probing the semiconductor device with analysis methods that provide information about the operation of the semiconductor device. Additional device functionality alteration is achieved by cutting, connecting, and re-routing interconnect layers.

Abstract: According to various examples, a semiconductor device for backside power delivery is described. The semiconductor device may include a device layer including an integrated circuit, wherein the device layer is between a top metal layer and a bottom metal layer. The semiconductor device may also include a focused-ion beam access point on the top metal layer. The semiconductor device may also include one or more tie cells connected to the integrated circuit of the device layer. The semiconductor device may also include one or more functional cells connected to the one or more tie cells, wherein the one or more tie cells and one or more function cells provide an electrical route on the top metal layer to the focused-ion beam access point.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed. An example apparatus includes interface circuitry to obtain circuitry logic, the circuitry logic including a plurality of circuit elements logically connected by a plurality of nodes; identifier circuitry to: identify a node within the plurality of nodes for elevation; and identify a layer of an integrated circuit; port adder circuitry to modify the circuitry logic by adding a signal port, the signal port corresponding to a physical terminal in the identified layer; connector circuitry to modify the circuitry logic by connecting the signal port to the identified node; and layout planner circuitry to determine a layout of the integrated circuit based on the modified circuitry logic.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.

Abstract: Lithographic methodologies involving, and apparatuses suitable for, inline circuit edits are described. In an example, an integrated circuit structure includes a plurality of conductive structures along corresponding ones of a plurality of line tracks along a first direction. The integrated circuit structure also includes a white space track included within the plurality of line tracks, the white space track having a width along a second direction greater than a width of an individual one of the plurality of line tracks, the second direction orthogonal to the first direction. A conductive structure is along the white space track.