Patents by Inventor Ilan Shalish

Ilan Shalish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technology for thermodynamically stable contacts for binary wide band gap semiconductors
    Patent number: 6410460
    Abstract: A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
    Type: Grant
    Filed: May 15, 2000
    Date of Patent: June 25, 2002
    Assignees: Ramot University Authority for Applied Research and Industrial Development Ltd., Technion Research and Development Foundation Ltd.
    Inventors: Ilan Shalish, Yoram Shapira, Moshe Eizenberg