Patents by Inventor Ilaria Zardo

Ilaria Zardo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Direct band gap wurtzite semiconductor nanowires
    Patent number: 9493890
    Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: November 15, 2016
    Assignee: Technische Universiteit Eindhoven
    Inventors: Simone Assali, Ilaria Zardo, Jozef Everardus Maria Haverkort, Erik Petrus Antonius Maria Bakkers
  • Direct band gap wurtzite semiconductor nanowires
    Publication number: 20140230720
    Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 21, 2014
    Inventors: Simone Assali, Ilaria Zardo, Jozef Everardus Maria Haverkort, Erik Petrus Antonius Maria Bakkers