Abstract: A method of forming a Schottky barrier contact to a semiconductor material, includes the following steps: depositing an iridium contact on a surface of the semiconductor material; and annealing the iridium contact to form a Schottky barrier contact to the semiconductor material. For an example of an iridium Schottky contact on an InAlAs semiconductor material, the annealing temperature is preferably in the range about 350° C. to 500° C.

Abstract: A method for making a high electron mobility field-effect transistor device, including the following steps: providing a layered semiconductor structure that includes an InGaAs channel layer and at least two layers over the channel layer, the at least two layers including a layer of InAlAs, a portion of which has an InGaAs cap layer deposited thereon; depositing spaced apart source and drain ohmic contacts on the InGaAs cap layer, the source and drain contacts comprising Ge/Ag/Ni contacts; and depositing a gate contact, between the source and drain contacts, on the InAlAs layer.

Abstract: A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III-V material surface. The surface is then etched in a solution including HF and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III-V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Abstract: The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination or oxides. A high work function metal is then formed on the oxide-forming layer. An anneal is conducted to diffuse the high work function on metal through the oxide-forming layer. One or more metal cap layers may top the high work function metal to protect the high work function metal.

Abstract: A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III-V material surface. The surface is then etched in a solution including HF and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III-V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Abstract: A low dark current metal-semiconductor-metal photodetector has an active region for receiving photons and generating charge carriers in the form of holes and electrons in response to the photons and an isolation region for allowing electrical coupling to occur without increasing the dark current. The photodetector is a III-V ternary semiconductor having its active region defined by a via through a dielectric layer. A pair of electrodes has contact portions extending into contact with the active region and terminating on the isolation region. One electrode of the pair provides a high Schottky barrier to holes.