Abstract: Disclosed is a biphasic electrically conductive perovskite-based mixed oxide of the structure ABO3 with A=Ba, and B=Co, comprising additionally 5-45 at %, preferably 15 to 30 at %, particularly preferably 25 at % Co3O4 (at % Co based on the total number of Co atoms in the perovskite ABO3 and 0.5 to 0.3 at %, preferably 1 to 2.5 at %, particularly preferably 2 at % (wherein the at % are referred to the total number of B cations in the perovskite ABO3) Ti as dopant. Preferably, the mixed oxide has the stoichiometric formula BaCo1?xTixO3??:Co3O4 with x=0.005 to 0.03, preferably x=0.01 to 0.025, particularly preferably x=0.02, wherein ? defines the vacancies in the perovskite structure and is in the range of about 0.1 to 0.8, preferably 0.3 to 0.7, particularly preferably about 0.5 to 0.6.

Abstract: Disclosed is a biphasic electrically conductive perovskite-based mixed oxide of the structure ABO3 with A=Ba, and B=Co, comprising additionally 5-45 at %, preferably 15 to 30 at %, particularly preferably 25 at % Co3O4 (at % Co based on the total number of Co atoms in the perovskite ABO3 and 0.5 to 3 at %, preferably 1 to 2.5 at %, particularly preferably 2 at % (wherein the at % are referred to the total number of B cations in the perovskite ABO3) Ti as dopant. Preferably, the mixed oxide has the stoichiometric formula BaCo1?xTixO3??:Co3O4 with x=0.005 to 0.03, preferably x=0.01 to 0.025, particularly preferably x=0.02, wherein ? defines the vacancies in the perovskite structure and is in the range of about 0.1 to 0.8, preferably 0.3 to 0.7, particularly preferably about 0.5 to 0.6.

Abstract: A method for reading out a resistive memory cell comprising two electrodes that are spaced from each other by an ion-conducting resistive material was developed, the memory cells being transferrable from a stable state having a higher resistance value (high resistive state, HRS) to a stable state having a lower resistance value (low resistive state, LRS) when a write voltage is applied.

Abstract: A method for reading out a resistive memory cell comprising two electrodes that are spaced from each other by an ion-conducting resistive material was developed, the memory cells being transferrable from a stable state having a higher resistance value (high resistive state, HRS) to a stable state having a lower resistance value (low resistive state, LRS) when a write voltage is applied.

Abstract: A method for reading out a non-volatile memory element having at least two stable states 0 and 1. This memory element comprises at least one resistive memory cell, which encodes the two states 0 and 1 into a state HRS having higher electrical resistance and a state LRS having lower electrical resistance. In the two states 0 and 1, the memory element has differing capacitances C0,1; this difference is used to determine which state is present. A memory element is selected in which a fixed capacitance that is independent of the state of the memory cell is connected in series with the memory cell. A series connection of a resistive memory cell with a fixed capacitance, instead of with a second resistive memory cell, improves the signal strength during capacitive read-out. The second memory cell becomes indispensable for the memory function when the memory element is read out capacitively.

Abstract: A method for reading out a non-volatile memory element having at least two stable states 0 and 1. This memory element comprises at least one resistive memory cell, which encodes the two states 0 and 1 into a state HRS having higher electrical resistance and a state LRS having lower electrical resistance. In the two states 0 and 1, the memory element has differing capacitances C0,1; this difference is used to determine which state is present. A memory element is selected in which a fixed capacitance that is independent of the state of the memory cell is connected in series with the memory cell. A series connection of a resistive memory cell with a fixed capacitance, instead of with a second resistive memory cell, improves the signal strength during capacitive read-out. The second memory cell becomes indispensable for the memory function when the memory element is read out capacitively.

Abstract: A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.

Abstract: A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.